Microstructure Characterization of Amorphous Silicon Based Alloys by Inert Gas Effusion Studies

2000 ◽  
Vol 609 ◽  
Author(s):  
Wolfhard Beyer ◽  
Sergio S. Camargo ◽  
Rosari Saleh

ABSTRACTIt is shown that inert gas effusion employing implanted neon and argon atoms is a useful tool for microstructure characterization of a-Si based alloys. The method measures sensitively interconnected voids and gives information about sizes of microstructure. Limitations of the method are discussed. The results show network reconstruction effects in a-Si:O:H and a-Si:C:H alloys as a function of annealing.

1992 ◽  
Vol 06 (08) ◽  
pp. 469-475
Author(s):  
M. HAMMAM

Compositionally graded hydrogenated amorphous silicon-sulfur alloys ( a-Si 1−x S x: H ) were grown by RF glow discharge decomposition of silane and hydrogen sulfide gases. Infrared spectra show clear evidence for the incorporation of sulfur in the form of Si-S bonds in the material. The graded bandgap films possess optical bandgaps ranging from 1.91 to 2.05 eV depending on the RF power. The compositionally graded layers display high photosensitivities indicating that they may be ideal candidates for use in amorphous silicon based tandem cells.


2014 ◽  
Vol 11 (11-12) ◽  
pp. 1711-1713 ◽  
Author(s):  
Thomas Mambrini ◽  
Anne Migan-Dubois ◽  
Christophe Longeaud ◽  
Mustapha Elyaakoubi

2019 ◽  
Vol 25 (S2) ◽  
pp. 356-357
Author(s):  
T. Vorauer ◽  
P. Kumar ◽  
F. F. Chamasemani ◽  
J. Rosc ◽  
B. Fuchsbichler ◽  
...  

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.


2009 ◽  
Vol E92-C (5) ◽  
pp. 708-712
Author(s):  
Dong-Heon HA ◽  
Chi Ho HWANG ◽  
Yong Soo LEE ◽  
Hee Chul LEE

1998 ◽  
Vol 10 (1) ◽  
pp. 366-371 ◽  
Author(s):  
Oscar H. Giraldo ◽  
William S. Willis ◽  
Manuel Márquez ◽  
Steven L. Suib ◽  
Yuji Hayashi ◽  
...  

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