Synthesis and Characterization of Halogenated Amorphous Silicon via a Novel Glow Discharge Process

1998 ◽  
Vol 10 (1) ◽  
pp. 366-371 ◽  
Author(s):  
Oscar H. Giraldo ◽  
William S. Willis ◽  
Manuel Márquez ◽  
Steven L. Suib ◽  
Yuji Hayashi ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Synthesis And Characterization ◽  
Discharge Process

ChemInform Abstract: Synthesis and Characterization of Halogenated Amorphous Silicon via a Novel Glow Discharge Process.

ChemInform ◽  
2010 ◽  
Vol 29 (16) ◽  
pp. no-no
Author(s):  
O. H. GIRALDO ◽  
W. S. WILLIS ◽  
M. MARQUEZ ◽  
S. L. SUIB ◽  
Y. HAYASHI ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Synthesis And Characterization ◽  
Discharge Process

scholarly journals Darstellung und Charakterisierung einfacher α-Sila- und α,ω-Disilaalkane als Vorstufen für die CVD-Erzeugung von amorphem Silicium a-SiC:H / Synthesis and Characterization of Simple α-Sila- and α,ω-Disilaalkanes: Precursors for the CVD Production of Amorphous Silicon a-SiC:H

1987 ◽  
Vol 42 (9) ◽  
pp. 1088-1096 ◽  
Author(s):  
Hubert Schmidbaur ◽  
Cornelia Dörzbach
Keyword(s):  
Amorphous Silicon ◽  
Spectroscopic Properties ◽  
High Yield ◽  
Synthesis And Characterization ◽  
Nmr Data ◽  
Functional Derivatives ◽  
New Compounds

Preparative methods have been explored for the synthesis of small, volatile polysilaalkanes, which could serve as starting materials for the production of amorphous silicon a-SiC:H. High yield pathways have been developed for H3SiCH2CH2SiH3 and H3SiCH2CH2CH2SiH3. These compounds can be converted into symmetrically halogen-functional derivatives through the reac­tions with SnCl4 or Br2. The homologous H3SiCH2CH2SiH2CH3 has also been prepared and halogenated, starting from the corresponding vinylsilane via the hydrosilylation route. Allylsilanes were the source of the synthesis of H3SiCH2CH=CH2, CH3SiH2CH2CH=CH, SiH2(CH2CH = CH2)2, SiH2(CH2CH2CH2SiH3)2, or HSi(CH2CH2CH2SiH3)3. Methylated deriva­tives are also available. - Some physical and spectroscopic properties of the new compounds have been investigated. In particular. NMR data were collected and used for an assessment of structure and isomerism.

Growth and Characterization of Hydrogenated Amorphous Silicon using Liquid Organic Sources

1991 ◽  
Vol 219 ◽  
Author(s):  
K. Gaughan ◽  
S. Hershgold ◽  
J. M. Viner ◽  
P. C. Taylor
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Wide Band ◽  
Discharge Process ◽  
Wide Band Gap ◽  
Silicon Carbon ◽  
Rf Glow Discharge ◽  
Hydrogenated Amorphous

ABSTRACTThe uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap (E04 3 ≈ eV) a-SiC:H.

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