Carbon Nanotube Deposition using Helicon Plasma CVD at Low Temperature

2002 ◽  
Vol 728 ◽  
Author(s):  
Masakazu Muroyama ◽  
Takao Yagi ◽  
Kouji Inoue ◽  
Ichiro Saito
Keyword(s):  
Carbon Nanotubes ◽  
Low Temperature ◽  
Chemical Vapor ◽  
Plasma Source ◽  
Metal Catalyst ◽  
Nickel Catalysis ◽  
Helicon Plasma ◽  
Plasma Chemical Vapor Deposition ◽  
Aligned Carbon Nanotubes ◽  
Growth Method

AbstractWe developed a novel growth method of aligned carbon nanotubes. Aligned carbon nanotubes are grown on a metal catalyst on a glass substrate using biased Helicon plasma chemical vapor deposition (HPECVD) of CH4/H2 gases from 400 C to 500 C. The Helicon plasma source is one of the high-density plasma sources and is promising for low temperature carbon deposition. A Ni film was used as a catalyst to reduce the activation energy of the nanotubes' growth. The carbon nanotubes were deposited on the nickel catalysis layer selectively.

Fabrication of Carbon Nanotube Triode Using Helicon Plasma Cvd with Electroplated Nico Catalyst

2003 ◽  
Vol 772 ◽  
Author(s):  
Masakazu Muroyama ◽  
Kazuto Kimura ◽  
Takao Yagi ◽  
Ichiro Saito
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Metal Catalyst ◽  
Ni Catalyst ◽  
Plasma Cvd ◽  
Helicon Plasma ◽  
Plasma Enhanced Cvd ◽  
Turn On ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned

AbstractA carbon nanotube triode using Helicon Plasma-enhanced CVD with electroplated NiCo catalyst has been successfully fabricated. Isolated NiCo based metal catalyst was deposited at the bottom of the cathode wells by electroplating methods to control the density of carbon nanotubes and also reduce the activation energy of its growth. Helicon Plasma-enhanced CVD (HPECVD) has been used to deposit nanotubes at 400°C. Vertically aligned carbon nanotubes were then grown selectively on the electroplated Ni catalyst. Field emission measurements were performed with a triode structure. At a cathode to anode gap of 1.1mm, the turn on voltage for the gate was 170V.

Controlled density of vertically aligned carbon nanotubes in a triode plasma chemical vapor deposition system

2006 ◽  
Vol 515 (4) ◽  
pp. 1380-1384 ◽  
Author(s):  
Sung Hoon Lim ◽  
Kyu Chang Park ◽  
Jong Hyun Moon ◽  
Hyun Sik Yoon ◽  
Didier Pribat ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Vertically Aligned Carbon Nanotubes ◽  
Plasma Chemical Vapor Deposition ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned

Low Temperature Chemical Vapor Deposition of High QualitySiO2Film Using Helicon Plasma Source

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 762-766 ◽  
Author(s):  
Yuko Nishimoto ◽  
Noboru Tokumasu ◽  
Kazuo Maeda
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Source ◽  
Helicon Plasma

Thermal-CVD System Designed for Growth of Carbon Nanotubes

2006 ◽  
Author(s):  
Samuele Porro ◽  
Simone Musso ◽  
Massimo Rovere ◽  
Mauro Giorcelli ◽  
Angelica Chiodoni ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor ◽  
Nitrogen Atmosphere ◽  
Metal Catalyst ◽  
Silicon Substrates ◽  
Carbon Structures ◽  
High Temperature Furnace ◽  
Aligned Carbon Nanotubes ◽  
Growth System ◽  
Vertically Aligned

We report a study on a thermal chemical vapor deposition (CVD) system optimized for the growth of well packed and vertically aligned carbon nanotubes (CNTs) on uncoated silicon substrates. The process of synthesis involves the co-evaporation of a carbon precursor and a metal catalyst in a nitrogen atmosphere inside a high temperature furnace. Beside the formation of CNTs, depending in particular on the deposition temperature, other carbon structures can be deposited, such as nanographite. We show the growth results analyzed by different characterization techniques (electron microscopy, porosity and thermal stability investigations, micro-Raman spectroscopy). In addition, we report an investigation on the development of secondary transversal vortex flows caused by the effects of distribution of temperatures inside the growth system, in order to correlate them with the growth results.

Formation of Vertically Aligned Carbon Nanotubes by Dual-RF-Plasma Chemical Vapor Deposition

2001 ◽  
Vol 40 (Part 2, No. 6B) ◽  
pp. L631-L634 ◽  
Author(s):  
Takashi Hirao ◽  
Korekiyo Ito ◽  
Hiroshi Furuta ◽  
Yoke Khin Yap ◽  
Takashi Ikuno ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Plasma Chemical ◽  
Vertically Aligned Carbon Nanotubes ◽  
Plasma Chemical Vapor Deposition ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned
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