Modeling of Phonon Dispersion in a Semiconductor Quantum Dot Crystal

2002 ◽  
Vol 731 ◽  
Author(s):  
Olga L. Lazarenkova ◽  
Alexander A. Balandin

AbstractWe describe a model for numerical calculation of phonon spectrum in a three-dimensional regimented array of semiconductor quantum dots. Regimentation and possibility of carrier mini-band formation make this structure analogous to a crystal, e.g.quantum dot crystal. It is demonstrated that the acoustic phonon dispersion undergoes strong modification in such a structure leading to emergence of low-energy quasi-optical branches. Strong phonon spectrum modification is expected to affect carrier relaxation and transport properties.

2009 ◽  
Vol 18 (04) ◽  
pp. 573-581
Author(s):  
QIGUANG YANG ◽  
JAETAE SEO ◽  
BAGHER TABIBI ◽  
WILLIAM YU ◽  
GUOLONG TAN ◽  
...  

The slow and fast propagation phenomena of optical pulses in a single semiconductor quantum dot have been investigated in the time domain. It was found that both the advancement and the slowdown of a pulse might be fulfilled by using the finite response nature of the semiconductor quantum dot.


2000 ◽  
Vol 454-456 ◽  
pp. 657-670 ◽  
Author(s):  
G. Springholz ◽  
M. Pinczolits ◽  
V. Holy ◽  
P. Mayer ◽  
K. Wiesauer ◽  
...  

2002 ◽  
Vol 12 (04) ◽  
pp. 1147-1158 ◽  
Author(s):  
SALVADOR RUFO ◽  
MITRA DUTTA ◽  
MICHAEL A. STROSCIO

We present calculations of the acoustic phonon spectra for a variety of quantum dots and consider the cases where the quantum dots are both free-standing and embedded in a selection of different matrix materials — including semiconductors, plastic, and water. These results go beyond previous calculations for free-standing quantum dots and demonstrate that the matrix material can have a large effect on the acoustic phonon spectrum and consequently on a variety of phonon-assisted transitions in quantum-dot heterostructures.


2010 ◽  
Vol 2010 ◽  
pp. 1-13 ◽  
Author(s):  
A. Berthelot ◽  
C. Voisin ◽  
C. Delalande ◽  
Ph. Roussignol ◽  
R. Ferreira ◽  
...  

We present a general theoretical description of the extrinsic dephasing mechanism of spectral diffusion that dominates the decoherence dynamics in semiconductor quantum dots at low temperature. We discuss the limits of random telegraph and Gaussian stochastic noises and show that the combination of both approaches in the framework of the pre-Gaussian noise theory allows a quantitative interpretation of high-resolution experiments in single semiconductor quantum dots. We emphasize the generality and the versatility of our model where the inclusion of asymmetric jump processes appears as an essential extension for the understanding of semiconductor quantum dot physics.


Nanoscale ◽  
2021 ◽  
Author(s):  
Yuanqing Xu ◽  
Weibiao Wang ◽  
Zhexue Chen ◽  
Xinyu Sui ◽  
Aocheng Wang ◽  
...  

Mass production of semiconductor quantum dots (QDs) from bulk materials is highly desired but far from satisfactory. Herein, we report a general strategy capable of mechanically tailoring semiconductor bulk materials...


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