Optical Characterization of Bulk GaN Grown from a Na/Ga Flux

2002 ◽  
Vol 743 ◽  
Author(s):  
K. Palle ◽  
L. Chen ◽  
H. X. Liu ◽  
B. J. Skromme ◽  
H. Yamane ◽  
...  
Keyword(s):  
Large Scale ◽  
Deep Level ◽  
Optical Characterization ◽  
Flux Method ◽  
Triplet Structure ◽  
Bulk Gan ◽  
Scale Reactor ◽  
Low Temperature Photoluminescence ◽  
Residual Zn

ABSTRACTBulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.

Correlated structural and optical characterization of ammonothermally grown bulk GaN

2004 ◽  
Vol 84 (17) ◽  
pp. 3289-3291 ◽  
Author(s):  
J. Bai ◽  
M. Dudley ◽  
B. Raghothamachar ◽  
P. Gouma ◽  
B. J. Skromme ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Bulk Gan

Optical characterization of bulk GaN grown by a Na–Ga melt technique

2002 ◽  
Vol 246 (3-4) ◽  
pp. 299-306 ◽  
Author(s):  
B.J Skromme ◽  
K Palle ◽  
C.D Poweleit ◽  
H Yamane ◽  
M Aoki ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Bulk Gan

Fabrication and optical characterization of large scale membrane containing InP/AlGaInP quantum dots

2015 ◽  
Vol 26 (23) ◽  
pp. 235201 ◽  
Author(s):  
H Niederbracht ◽  
F Hargart ◽  
M Schwartz ◽  
E Koroknay ◽  
C A Kessler ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Large Scale ◽  
Optical Characterization

Optical characterization of bulk GaN substrates with c -, a -, and m -plane surfaces

2009 ◽  
Vol 6 (S2) ◽  
pp. S763-S766 ◽  
Author(s):  
P. P. Paskov ◽  
B. Monemar ◽  
T. Paskova ◽  
E. A. Preble ◽  
A. D. Hanser ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Bulk Gan

On-site optical characterization of large-scale solar collectors through ray-tracing optimization

2020 ◽  
Vol 262 ◽  
pp. 114546
Author(s):  
Julian D. Hertel ◽  
Vincent Canals ◽  
Ramón Pujol-Nadal
Keyword(s):  
Ray Tracing ◽  
Large Scale ◽  
Optical Characterization ◽  
Solar Collectors

Optical characterization of bulk GaN silicon and magnesium doped: as grown, hydrogen implanted, and annealed

2004 ◽  
Vol 27 (1-3) ◽  
pp. 267-270 ◽  
Author(s):  
H. W. Kunert ◽  
D. Dale ◽  
L. C. Prinsloo ◽  
M. Hayes ◽  
J. Barnas ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Bulk Gan

Optical Characterization of Novel Crystal Na5Bi (WO4)2(MoO4)2 :Yb3+

2013 ◽  
Vol 787 ◽  
pp. 281-285 ◽  
Author(s):  
Jun Zhang ◽  
Zhen Qiang Chen ◽  
Chun Hao Wang ◽  
An Ming Li ◽  
Hao Yin ◽  
...  
Keyword(s):  
Absorption Spectrum ◽  
Melting Point ◽  
Absorption Band ◽  
Emission Band ◽  
Polycrystalline Material ◽  
Optical Characterization ◽  
Flux Method ◽  
Band Center ◽  
Band Emission

The compound-anion polycrystalline material Yb3+:Na5Bi (WO4)2(MoO4)2 was synthesized by flux method. Many characterization of XRD, DSC-TG, absorption spectrum and emission spectrum were studied. The result is shown that the new crystal belongs to Tetragonal, and space group is I41/a (88). Its melting point is 619 °C and the absorption band, emission band, center emission wavelength are about 83 nm, 50 nm, 1006 nm respectively.

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