Electron Bean Induced Defects in Silicon/Indium Oxide Heterojunctions and Interfacial Reactions During Annealing

1986 ◽  
Vol 76 ◽  
Author(s):  
S. Kar ◽  
A. Pandey ◽  
R. K. Dwivedi
Keyword(s):  
Experimental Data ◽  
Charge Density ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Fixed Charge Density ◽  
Induced Defects

ABSTRACTSi/In203 diodes have been prepared by e-beam evaporation of In203 tablets. Annealing of these devices was carried out in N2 and H2 /N2 mixture at 1 atm. in the temperature range of 400–800°C. Experimental data indicated a large increase in the Schottky barrier height and growth of interfacial oxide during annealing. The interface state density was reduced by a factor of 2, but the results indicated the increase in the barrier height to be mainly due to reduction of positive fixed charge density.

Schottky barrier height and interfacial state density on oxide-GaAs interface

2003 ◽  
Vol 94 (1) ◽  
pp. 348-353 ◽  
Author(s):  
J. S. Hwang ◽  
C. C. Chang ◽  
M. F. Chen ◽  
C. C. Chen ◽  
K. I. Lin ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
State Density ◽  
Interfacial State

Electrical and interface state density properties of polyaniline–poly-3-methyl thiophene blend/p-Si Schottky barrier diode

2010 ◽  
Vol 12 (5) ◽  
pp. 706-711 ◽  
Author(s):  
Savaş Sönmezoğlu ◽  
Sevilay Şenkul ◽  
Recep Taş ◽  
Güven Çankaya ◽  
Muzaffer Can
Keyword(s):  
Schottky Barrier ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diode

Interface state density analyzing of Au/TiO2(rutile)/n-Si Schottky barrier diode

2010 ◽  
Vol 42 (6-7) ◽  
pp. 1257-1260 ◽  
Author(s):  
H. Altuntas ◽  
A. Bengi ◽  
T. Asar ◽  
U. Aydemir ◽  
B. Sarıkavak ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diode ◽  
Tio2 Rutile

scholarly journals Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1698
Author(s):  
R. Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Series Resistance ◽  
Forward Bias ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Current Voltage ◽  
Density Of Interface States

The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the series resistance (RS) values are lower without considering the series resistance (RS). Furthermore, the interface state density (NSS) and relaxation time (tau) are also calculated from the experimental C-f and G-f measurements. The NSS values obtained from the I-V characteristics are almost three orders higher than the NSS values obtained from the C-f and G-f measurements. The experimental results depict that NSS and tau are decreased with bias voltage. The frequency dependence of the series resistance (RS) is attributed to the particular distribution density of interface states. DOI: 10.21883/FTP.2017.12.45189.8340

Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects

2001 ◽  
Vol 82-84 ◽  
pp. 255-258 ◽  
Author(s):  
Zsolt E. Horváth ◽  
M. Ádám ◽  
P. Godio ◽  
G. Borionetti ◽  
I.A. Szabó ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Chemical Treatment ◽  
Schottky Barrier Height ◽  
Plasma Etch ◽  
Induced Defects

DENSITY OF SURFACE STATES IN Pd/SiGe/Si INTERFACE FROM CAPACITANCE MEASUREMENTS

2007 ◽  
Vol 14 (04) ◽  
pp. 765-768 ◽  
Author(s):  
A. SELLAI ◽  
M. MAMOR ◽  
S. AL-HARTHI
Keyword(s):  
Energy Distribution ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Surface States ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diodes ◽  
Capacitance Measurements

Pd / Si 0.9 Ge 0.1/ Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C–V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.

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