DENSITY OF SURFACE STATES IN Pd/SiGe/Si INTERFACE FROM CAPACITANCE MEASUREMENTS

Pd / Si 0.9 Ge 0.1/ Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C–V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.

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A simple technique for measuring the interface‐state density of the Schottky barrier diodes using the current‐voltage characteristics

Journal of Applied Physics ◽

10.1063/1.338820 ◽

1987 ◽

Vol 61 (1) ◽

pp. 299-304 ◽

Cited By ~ 50

Author(s):

Hsun‐Hua Tseng ◽

Ching‐Yuan Wu

Keyword(s):

Schottky Barrier ◽

Simple Technique ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Schottky Barrier Diodes ◽

Current Voltage ◽

Current Voltage Characteristics

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Hydrostatic pressure dependence of interface state density of Cd/n-type GaAs Schottky barrier diodes

Physica B Condensed Matter ◽

10.1016/j.physb.2009.08.083 ◽

2010 ◽

Vol 405 (1) ◽

pp. 287-290 ◽

Cited By ~ 15

Author(s):

Savaş Sönmezoğlu ◽

Fatih Bayansal ◽

Güven Çankaya

Keyword(s):

Hydrostatic Pressure ◽

Schottky Barrier ◽

Pressure Dependence ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Schottky Barrier Diodes

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The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/n-Si schottky barrier diodes

Journal of Electronic Materials ◽

10.1007/s11664-002-0157-9 ◽

2002 ◽

Vol 31 (2) ◽

pp. 119-123 ◽

Cited By ~ 45

Author(s):

E. Ayyildiz ◽

Ç. Nuho Lu ◽

A Türüt

Keyword(s):

Density Distribution ◽

Schottky Barrier ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Schottky Barrier Diodes ◽

Frequency Measurements

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A simple model for extraction of interface state density of a Schottky barrier diode using reverse bias C-V plots

International Journal of Electronics ◽

10.1080/002072100132291 ◽

2000 ◽

Vol 87 (2) ◽

pp. 153-161

Author(s):

Santosh Pandey ◽

S. Kal

Keyword(s):

Simple Model ◽

Schottky Barrier ◽

Reverse Bias ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Schottky Barrier Diode

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The determination of electronic and interface state density distributions of Au/n-type GaAs Schottky barrier diodes

Physica B Condensed Matter ◽

10.1016/j.physb.2006.01.412 ◽

2006 ◽

Vol 381 (1-2) ◽

pp. 199-203 ◽

Cited By ~ 49

Author(s):

Ş. Karataş ◽

A. Türüt

Keyword(s):

Schottky Barrier ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Schottky Barrier Diodes ◽

Density Distributions

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The energy distribution of the interface state density of SnO2/p-Si (111) heterojunctions prepared at different substrate temperatures by spray deposition method

Applied Surface Science ◽

10.1016/j.apsusc.2004.11.022 ◽

2005 ◽

Vol 246 (1-3) ◽

pp. 30-35 ◽

Cited By ~ 42

Author(s):

S. Karadeniz ◽

N. Tuğluoğlu ◽

T. Serin ◽

N. Serin

Keyword(s):

Energy Distribution ◽

Spray Deposition ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Deposition Method ◽

Substrate Temperatures ◽

Spray Deposition Method

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The interface state energy distribution from capacitance–frequency characteristics of gold/n-type Gallium arsenide Schottky barrier diodes exposed to air

Thin Solid Films ◽

10.1016/s0040-6090(02)01140-9 ◽

2003 ◽

Vol 425 (1-2) ◽

pp. 210-215 ◽

Cited By ~ 33

Author(s):

A Özdemir

Keyword(s):

Gallium Arsenide ◽

Energy Distribution ◽

Schottky Barrier ◽

State Energy ◽

Interface State ◽

Frequency Characteristics ◽

Schottky Barrier Diodes

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Electrical properties and the determination of interface state density from I–V, C–f and G–f measurements in Ir/Ru/n-InGaN Schottky barrier diode

Semiconductors ◽

10.1134/s1063782617120156 ◽

2017 ◽

Vol 51 (12) ◽

pp. 1641-1649 ◽

Cited By ~ 1

Author(s):

R. Padma ◽

V. Rajagopal Reddy

Keyword(s):

Electrical Properties ◽

Schottky Barrier ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Schottky Barrier Diode

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Electrical and interface state density properties of polyaniline–poly-3-methyl thiophene blend/p-Si Schottky barrier diode

Solid State Sciences ◽

10.1016/j.solidstatesciences.2010.02.001 ◽

2010 ◽

Vol 12 (5) ◽

pp. 706-711 ◽

Cited By ~ 42

Author(s):

Savaş Sönmezoğlu ◽

Sevilay Şenkul ◽

Recep Taş ◽

Güven Çankaya ◽

Muzaffer Can

Keyword(s):

Schottky Barrier ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Schottky Barrier Diode

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Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.924.285 ◽

2018 ◽

Vol 924 ◽

pp. 285-288 ◽

Cited By ~ 1

Author(s):

Patrick Fiorenza ◽

Ferdinando Iucolano ◽

Mario Saggio ◽

Fabrizio Roccaforte

Keyword(s):

Interface State ◽

State Density ◽

Interface State Density ◽

Interface Traps ◽

Temperature Dependent ◽

Discharge Time ◽

Capacitance Measurements ◽

Gate Capacitance ◽

Transient Capacitance ◽

Oxide Traps

In this paper, near interface traps (NITs) in lateral 4H-SiC MOSFETs were investigated employing temperature dependent transient gate capacitance measurements (C-t). TheC-tmeasurements as a function of temperature indicated that the effective NITs discharge time is temperature independent and electrons from NITs are emitted toward the semiconductor via-tunnelling and/or trap-to-trap tunnelling. The NITs discharge time was modelled taking into account also the interface state density in a distributed circuit and it allowed to locate traps within a distance of about 1.3nm from the SiO2/4H-SiC interface.

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