A simple technique for measuring the interface‐state density of the Schottky barrier diodes using the current‐voltage characteristics

1987 ◽  
Vol 61 (1) ◽  
pp. 299-304 ◽  
Author(s):  
Hsun‐Hua Tseng ◽  
Ching‐Yuan Wu
Keyword(s):  
Schottky Barrier ◽  
Simple Technique ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics

Current‐voltage characteristics and interface state density of GaAs Schottky barrier

1993 ◽  
Vol 62 (20) ◽  
pp. 2560-2562 ◽  
Author(s):  
Keiji Maeda ◽  
Hideaki Ikoma ◽  
Kenji Sato ◽  
Toshiki Ishida
Keyword(s):  
Schottky Barrier ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Current Voltage ◽  
Current Voltage Characteristics

DENSITY OF SURFACE STATES IN Pd/SiGe/Si INTERFACE FROM CAPACITANCE MEASUREMENTS

2007 ◽  
Vol 14 (04) ◽  
pp. 765-768 ◽  
Author(s):  
A. SELLAI ◽  
M. MAMOR ◽  
S. AL-HARTHI
Keyword(s):  
Energy Distribution ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Surface States ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diodes ◽  
Capacitance Measurements

Pd / Si 0.9 Ge 0.1/ Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C–V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.

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