Microscopic Structure of Er-Related Optically Active Centers in Si

2003 ◽  
Vol 770 ◽  
Author(s):  
H. Przybylinska ◽  
N. Q. Vinh ◽  
B.A. Andreev ◽  
Z. F. Krasil'nik ◽  
T. Gregorkiewicz
Keyword(s):  
Ground State ◽  
Photoluminescence Spectrum ◽  
Zeeman Effect ◽  
Optically Active ◽  
Single Type ◽  
Active Centers ◽  
Mbe Growth ◽  
Spectral Components ◽  
Er Doped ◽  
Successful Observation

AbstractA successful observation and analysis of the Zeeman effect on the near 1.54 μm photoluminescence spectrum in Er-doped crystalline MBE-grown silicon are reported. A clearly resolved splitting of 5 major spectral components was observed in magnetic fields up to 5.5 T. Based on the analysis of the data the symmetry of the dominant optically active center was conclusively established as orthorhombic I (C2v), with g‼≈18.4 and g⊥≈0 in the ground state. The fact that g⊥≈0 explains why EPR detection of Er-related optically active centers in silicon may be difficult. Preferential generation of a single type of an optically active Er-related center in MBE growth confirmed in this study is essential for photonic applications of Si:Er.

scholarly journals Environment of Er Doped in a-Si:H and Its Relation with Photoluminescence Spectra

2006 ◽  
Vol 910 ◽  
Author(s):  
Minoru Kumeda ◽  
Yoshitaka Sekizawa ◽  
Akiharu Morimoto ◽  
Tatsuo Shimizu
Keyword(s):  
Angular Momentum ◽  
Ground State ◽  
Photoluminescence Spectrum ◽  
Energy Levels ◽  
Field Potential ◽  
Photoluminescence Spectra ◽  
Stark Splitting ◽  
Oxygen Ions ◽  
Structural Fluctuation ◽  
Er Doped

AbstractThe crystal-field potential at the Er3+ ion surrounded by six oxygen ions is expanded in terms of polynomials. After converting it into equivalent angular momentum operators, the Stark-splitting of the 4I15/2 ground state of the Er3+ ion is calculated. Influence of the change in the environment of the Er3+ ion on the shift of the energy levels is investigated and compared with the observed Er photoluminescence spectrum in a-Si:H. The scattering of the calculated energy levels by the structural fluctuation around the Er3+ ion is also compared with the linewidth of the component photoluminescence lines.

The formation of optically active centers in silica glass during implantation of bismuth ions

2020 ◽  
Author(s):  
J. S. Galiulina ◽  
A. P. Mamonov ◽  
M. S. I. Koubisy ◽  
T. V. Shtang ◽  
D. Yu. Biryukov ◽  
...  
Keyword(s):  
Silica Glass ◽  
Optically Active ◽  
Active Centers

Optically active centers in MgAl2O4 ceramics induced by 10 MeV electron beam

2019 ◽  
Author(s):  
A. S. Vagapov ◽  
A. N. Kiryakov ◽  
A. F. Zatsepin ◽  
Yu. V. Shchapova ◽  
E. V. Gol’eva
Keyword(s):  
Electron Beam ◽  
Optically Active ◽  
Active Centers

Microscopic Structure of Er-Related Optically Active Centers in Crystalline Silicon

2003 ◽  
Vol 90 (6) ◽  
Author(s):  
N. Q. Vinh ◽  
H. Przybylińska ◽  
Z. F. Krasil’nik ◽  
T. Gregorkiewicz
Keyword(s):  
Crystalline Silicon ◽  
Optically Active ◽  
Microscopic Structure ◽  
Active Centers

The optically active center and its activation process in Er-doped Si thin film produced by laser ablation

1999 ◽  
Vol 85 (8) ◽  
pp. 4024-4031 ◽  
Author(s):  
Masashi Ishii ◽  
Tetsuya Ishikawa ◽  
Tatzuo Ueki ◽  
Shuji Komuro ◽  
Takitaro Morikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Active Center ◽  
Optically Active ◽  
Activation Process ◽  
Er Doped ◽  
Si Thin Film

Optically active centers in Si/Si1 − x Ge x :Er heterostructures containing Er3+ ions

2009 ◽  
Vol 43 (7) ◽  
pp. 877-884 ◽  
Author(s):  
L. V. Krasilnikova ◽  
M. V. Strepikhova ◽  
N. A. Baidakova ◽  
Yu. N. Drozdov ◽  
Z. F. Krasilnik ◽  
...  
Keyword(s):  
Optically Active ◽  
Active Centers

Optical properties of a single type of optically active center inSi∕Si:Ernanostructures

2004 ◽  
Vol 70 (11) ◽  
Author(s):  
N. Q. Vinh ◽  
H. Przybylińska ◽  
Z. F. Krasil’nik ◽  
T. Gregorkiewicz
Keyword(s):  
Optical Properties ◽  
Active Center ◽  
Optically Active ◽  
Single Type

scholarly journals Синтез методом молекулярно-пучковой эпитаксии и свойства наноструктур InGaN разветвленной морфологии на кремниевой подложке

2019 ◽  
Vol 45 (21) ◽  
pp. 48
Author(s):  
Р.Р. Резник ◽  
К.П. Котляр ◽  
Н.В. Крыжановская ◽  
С.В. Морозов ◽  
Г.Э. Цырлин
Keyword(s):  
Substrate Temperature ◽  
Photoluminescence Spectrum ◽  
Room Temperature ◽  
Si Substrate ◽  
Mbe Growth ◽  
Morphological Studies

A possibility of InGaN «nanoflowers» MBE growth on Si substrate has been demonstrated. The results of morphological studies have shown that InGaN synthesis occurs in several stages even at constant substrate temperature. The grown structures show wide photoluminescence spectrum in the range from 450 to 950 nm at room temperature.

Site-selective x-ray absorption fine structure analysis of an optically active center in Er-doped semiconductor thin film using x-ray-excited optical luminescence

2001 ◽  
Vol 78 (2) ◽  
pp. 183-185 ◽  
Author(s):  
Masashi Ishii ◽  
Yoshihito Tanaka ◽  
Tetsuya Ishikawa ◽  
Shuji Komuro ◽  
Takitaro Morikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Fine Structure ◽  
Active Center ◽  
Optically Active ◽  
X Ray ◽  
Optical Luminescence ◽  
Semiconductor Thin Film ◽  
Er Doped ◽  
Site Selective ◽  
X Ray Absorption
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