Epitaxial IV-VI Semiconductor Films

ABSTRACTEpitaxial films of IV-VI semiconductors and their alloys form the basis of an infrared detector technology that offers advantages in material stability as well as spectral versatility. These films are prepared by epitaxial hot-wall techniques and their material properties are essentially the same as those of bulk crystals. Because of their stability, multilayer growths of the materials can be achieved in a straight-forward manner. To date, multi-color detectors and small scale two-color detector arrays have been demonstrated successfully. A brief review of the growth method and the growth characteristics is given. Recent advances in superlattice research, especially those of interest to electro-optical devices, will be discussed. These include persistent photoconductivity and sub-bandgap optical transition.

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Uncooled Infrared Detector Arrays With Electrostatically Levitated Sensing Elements

10.21236/ada431988 ◽

2005 ◽

Author(s):

T. Blalock ◽

M. Reed

Keyword(s):

Infrared Detector ◽

Detector Arrays

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Weak‐field magnetoresistance symmetry in epitaxial films and bulk crystals ofp‐type SnTe

Journal of Applied Physics ◽

10.1063/1.325500 ◽

1978 ◽

Vol 49 (8) ◽

pp. 4442-4445 ◽

Cited By ~ 11

Author(s):

R. S. Allgaier ◽

Bland Houston ◽

J. B. Restorff

Keyword(s):

Weak Field ◽

Epitaxial Films ◽

Bulk Crystals

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Integrated Infrared Detector Arrays For Low-Background Applications

10.1117/12.933433 ◽

1982 ◽

Cited By ~ 1

Author(s):

Craig R. McCreight ◽

John H. Goebel

Keyword(s):

Infrared Detector ◽

Detector Arrays ◽

Low Background

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Effect of O2 Partial Pressure on Post Annealed Ba2YCU3O7-δ Thin Films

MRS Proceedings ◽

10.1557/proc-275-127 ◽

1992 ◽

Vol 275 ◽

Author(s):

Julia M. PhUlips ◽

M. P. Siegal ◽

S. Y. Hou ◽

T. H. Tiefel ◽

J. H. Marshall

Keyword(s):

Partial Pressure ◽

Film Growth ◽

Epitaxial Films ◽

Pinning Force ◽

Low Oxygen ◽

O2 Partial Pressure ◽

Growth Method ◽

Lower Temperature ◽

The Relationship

ABSTRACTEpitaxial films of Ba2YCu3O7-δ (BYCO) as thin as 250 å A and with Jc's approaching those of the best in situ grown films can be formed by co-evaporating BaF2, Y, and Cu followed by a two-stage anneal. These results extend the work on films > 2000 Å thick by R. Feenstra et al. [J. Appl. Phys. 69, 6569 (1991)]. High quality films of these thicknesses become possible if low oxygen partial pressure [p(O2) = 4.3 Torr] is used during the high temperature portion cf the anneal (Ta). The BYCO melt line is the upper limit for Ta. The use of low p(O2) shifts the window for stable BYCO film growth to lower temperature, which allows the formation of smooth films with greater microstructural disorder than is found in films grown in p(O2) = 740 Torr at higher Ta. The best films annealed in p(O2)=4.3 Torr have Jc values a factor of four higher than do comparable films annealed in P2=740 Torr. The relationship between the T required to grow films with the strongest pinning force and p(O2) is log independent of growth method (in situ or situ) over a range of five orders of magnitude of P(O2).

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