scholarly journals Approaches to identification of fragments of a dislocation etch pit on a semiconductor monocrystal waffer

2019 ◽  
pp. 115-120
Author(s):  
Andrii М. Samoilov ◽  
Igor V. Shevchenko
Keyword(s):  
Etch Pit ◽  
Dislocation Etch

Dislocation Etch Pit Formation on Cadmium Crystal

1973 ◽  
Vol 12 (10) ◽  
pp. 1647-1648 ◽  
Author(s):  
Hironobu Nishikawa
Keyword(s):  
Etch Pit ◽  
Pit Formation ◽  
Dislocation Etch

Variation of dislocation etch-pit geometry: An indicator of bulk microstructure and recombination activity in multicrystalline silicon

2014 ◽  
Vol 115 (18) ◽  
pp. 183511 ◽  
Author(s):  
S. Castellanos ◽  
M. Kivambe ◽  
J. Hofstetter ◽  
M. Rinio ◽  
B. Lai ◽  
...  
Keyword(s):  
Multicrystalline Silicon ◽  
Recombination Activity ◽  
Etch Pit ◽  
Dislocation Etch

Observation of Dislocation in α-Arsenic Single Crystals by X-Ray Diffraction Topography*

1968 ◽  
Vol 12 ◽  
pp. 151-164
Author(s):  
M. N. Shetty ◽  
J. B. Taylor ◽  
L. D. Calvert
Keyword(s):  
Single Crystals ◽  
Beam Divergence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Etch Pit ◽  
Dislocation Etch

AbstractX-ray diffraction topographs were obtained from large arsenic single crystals. The camera employed copper Kα, radiation from a microfocus tube and an oscillating assembly of Soller slits limited the beam divergence. Reflections of the type (11) and (20) (primitive rhombohedral cell) were used to characterise dislocation Burgers vectors. The technique has been applied to arsenic single crystals grown from the vapour and from the melt. The majority of dislocations were found to belong to Burgers vectors <10>. Comparison has been made between dislocation etch pit patterns on (111) surfaces and X-ray topographs.

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