Variation of dislocation etch-pit geometry: An indicator of bulk microstructure and recombination activity in multicrystalline silicon

2014 ◽  
Vol 115 (18) ◽  
pp. 183511 ◽  
Author(s):  
S. Castellanos ◽  
M. Kivambe ◽  
J. Hofstetter ◽  
M. Rinio ◽  
B. Lai ◽  
...  
Keyword(s):  
Multicrystalline Silicon ◽  
Recombination Activity ◽  
Etch Pit ◽  
Dislocation Etch

Dislocation Etch Pit Formation on Cadmium Crystal

1973 ◽  
Vol 12 (10) ◽  
pp. 1647-1648 ◽  
Author(s):  
Hironobu Nishikawa
Keyword(s):  
Etch Pit ◽  
Pit Formation ◽  
Dislocation Etch

scholarly journals Inferring dislocation recombination strength in multicrystalline silicon via etch pit geometry analysis

2014 ◽  
Author(s):  
Sergio Castellanos ◽  
Jasmin Hofstetter ◽  
Maulid Kivambe ◽  
Markus Rinio ◽  
Barry Lai ◽  
...  
Keyword(s):  
Multicrystalline Silicon ◽  
Etch Pit ◽  
Geometry Analysis

Influence of metal impurities on recombination activity of dislocations in multicrystalline silicon

2013 ◽  
Vol 47 (2) ◽  
pp. 232-234 ◽  
Author(s):  
O. V. Feklisova ◽  
X. Yu ◽  
D. Yang ◽  
E. V. Yakimov
Keyword(s):  
Multicrystalline Silicon ◽  
Recombination Activity ◽  
Metal Impurities

Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers

2013 ◽  
Vol 205-206 ◽  
pp. 65-70
Author(s):  
Ali Ghaderi ◽  
Semih Senkader
Keyword(s):  
Silicon Wafers ◽  
Multicrystalline Silicon ◽  
Structural Defects ◽  
Limiting Factor ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Etch Pit ◽  
Process Characterization ◽  
Crystallisation Process ◽  
Dislocation Content

A major performance limiting factor of multicrystalline silicon wafers is structural defects, mainly dislocations, reducing solar cell efficiency. Dislocations are formed during crystallisation process. Characterization of dislocation-content is necessary both to optimise the crystallisation and to eliminate bad wafers before cell processing. We developed two techniques to characterise dislocations: conventional etch-pit counting modified for full size wafers using a new etch-recipe and a novel etch-pit counting algorithm. Secondly we developed a technique to estimate the dislocation content directly from photoluminescence images of as-cut wafers.

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