Selective Growth of Self-Assembling Si and SiGe Quantum Dots

2014 ◽  
Vol E97.C (5) ◽  
pp. 393-396
Author(s):  
Katsunori MAKIHARA ◽  
Mitsuhisa IKEDA ◽  
Seiichi MIYAZAKI
Keyword(s):  
Quantum Dots ◽  
Selective Growth ◽  
Self Assembling

Ingan Quantum Dots Fabricated On Aigan Surfaces -Growth Mechanism And Optical Propertiesh-

1997 ◽  
Vol 482 ◽  
Author(s):  
H. Hirayama ◽  
S. Tanaka ◽  
P. Ramvall ◽  
Y. Aoyagi
Keyword(s):  
Quantum Dots ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Energy Shift ◽  
Organic Chemical ◽  
Self Assembling ◽  
Atomic Force ◽  
Peak Energy ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractWe demonstrate photoluminescence from self- assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal- organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step- flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ˜10nm and ˜5nm, respectively, by an atomic- force- microscope (AFM). Indium mole fraction of InxGal−x N QDs is controlled from x=˜0.22 to ˜0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature- dependent energy shift of the photoluminescence peak- energy shows a localization behavior.

Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

1998 ◽  
Vol 72 (14) ◽  
pp. 1736-1738 ◽  
Author(s):  
Hideki Hirayama ◽  
Satoru Tanaka ◽  
Peter Ramvall ◽  
Yoshinobu Aoyagi
Keyword(s):  
Quantum Dots ◽  
Self Assembling

Self-assembling quantum dots for optoelectronic devices on Si and GaAs

2001 ◽  
Vol 9 (1) ◽  
pp. 164-174 ◽  
Author(s):  
K. Eberl ◽  
M.O. Lipinski ◽  
Y.M. Manz ◽  
W. Winter ◽  
N.Y. Jin-Phillipp ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optoelectronic Devices ◽  
Self Assembling

Selective growth of InAs/GaAs self-organized quantum dots by shadow mask technique

2001 ◽  
Vol 227-228 ◽  
pp. 1053-1056 ◽  
Author(s):  
R Songmuang ◽  
S Kiravittaya ◽  
S Thainoi ◽  
P Changmuang ◽  
S Sopitpan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Selective Growth ◽  
Shadow Mask ◽  
Self Organized

Nanofabrication of Quantum Dots on InP by In-Situ Etching and Selective Growth

2012 ◽  
Author(s):  
Y. Huang ◽  
T. Kim ◽  
T. Garrod ◽  
L. J. Mawst ◽  
S. Xiong ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Selective Growth

Selective growth of InAs quantum dots using In nano-dot arrays formed by nano-jet probe method

2007 ◽  
Vol 301-302 ◽  
pp. 726-730 ◽  
Author(s):  
S. Ohkouchi ◽  
Y. Sugimoto ◽  
N. Ozaki ◽  
H. Ishikawa ◽  
K. Asakawa
Keyword(s):  
Quantum Dots ◽  
Selective Growth ◽  
Probe Method ◽  
Inas Quantum Dots

Selective growth of InAs self-assembled quantum dots on nanopatterned SiO2/Si substrate

2001 ◽  
Vol 78 (10) ◽  
pp. 1403-1405 ◽  
Author(s):  
B. H. Choi ◽  
C. M. Park ◽  
S.-H. Song ◽  
M. H. Son ◽  
S. W. Hwang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Selective Growth ◽  
Si Substrate ◽  
Self Assembled

Selective growth of Ge quantum dots on chemically prepared SiO2/Si(001) surfaces

2003 ◽  
Vol 101 (1-3) ◽  
pp. 199-203 ◽  
Author(s):  
Lam H. Nguyen ◽  
V. Le Thanh ◽  
D. Débarre ◽  
V. Yam ◽  
D. Bouchier
Keyword(s):  
Quantum Dots ◽  
Selective Growth ◽  
Ge Quantum Dots
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