Electrically Driven Near-Infrared Broadband Light Source with Gaussian-Like Spectral Shape Based on Multiple InAs Quantum Dots

2016 ◽  
Vol E99.C (3) ◽  
pp. 381-384 ◽  
Author(s):  
Takuma YASUDA ◽  
Nobuhiko OZAKI ◽  
Hiroshi SHIBATA ◽  
Shunsuke OHKOUCHI ◽  
Naoki IKEDA ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Source ◽  
Near Infrared ◽  
Spectral Shape ◽  
Inas Quantum Dots ◽  
Broadband Light Source

Monolithically grown multi-color InAs quantum dots as a spectral-shape-controllable near-infrared broadband light source

2013 ◽  
Vol 103 (5) ◽  
pp. 051121 ◽  
Author(s):  
Nobuhiko Ozaki ◽  
Koichi Takeuchi ◽  
Shunsuke Ohkouchi ◽  
Naoki Ikeda ◽  
Yoshimasa Sugimoto ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Source ◽  
Near Infrared ◽  
Spectral Shape ◽  
Inas Quantum Dots ◽  
Broadband Light Source

Emission wavelength control of InAs/GaAs quantum dots using an As2 source for near-infrared broadband light source applications

2021 ◽  
Vol 14 (5) ◽  
pp. 055501
Author(s):  
Nobuhiko Ozaki ◽  
Yuma Hayashi ◽  
Shunsuke Ohkouchi ◽  
Hirotaka Ohsato ◽  
Eiichiro Watanabe ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Source ◽  
Near Infrared ◽  
Emission Wavelength ◽  
Broadband Light Source ◽  
Wavelength Control

scholarly journals Integration of Emission-Wavelength-Controlled InAs Quantum Dots for Ultra-Broadband Near-Infrared Light Source

10.5772/59315 ◽  
2014 ◽  
Vol 4 ◽  
pp. 26 ◽  
Author(s):  
Nobuhiko Ozaki ◽  
Koichi Takeuchi ◽  
Yuji Hino ◽  
Yohei Nakatani ◽  
Takuma Yasuda ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Source ◽  
Near Infrared ◽  
Emission Wavelength ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Inas Quantum Dots

Tuning of near infrared excitonic emission from InAs quantum dots by controlling the sub-monolayer coverage

2019 ◽  
Vol 210 ◽  
pp. 311-321 ◽  
Author(s):  
S. Mukherjee ◽  
A. Pradhan ◽  
S. Mukherjee ◽  
T. Maitra ◽  
S. Sengupta ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Inas Quantum Dots ◽  
Excitonic Emission ◽  
Monolayer Coverage

Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3μm by using quantum dot bi-layer for broadband light source

2013 ◽  
Vol 378 ◽  
pp. 553-557 ◽  
Author(s):  
N. Ozaki ◽  
Y. Nakatani ◽  
S. Ohkouchi ◽  
N. Ikeda ◽  
Y. Sugimoto ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Light Source ◽  
Emission Wavelength ◽  
Broadband Light Source

Wideband near-infrared LED with over 1 mW power by stacked InAs quantum dots/GaAs

2012 ◽  
Vol 9 (12) ◽  
pp. 2348-2351 ◽  
Author(s):  
Shingo Fuchi ◽  
Kazuma Tani ◽  
Takanori Arai ◽  
Satoshi Kamiyama ◽  
Yoshikazu Takeda
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Inas Quantum Dots

Influence of Three-Component Barrier Layers on Optical Properties of Photodetectors with Quantum Dots

2021 ◽  
Vol 316 ◽  
pp. 999-1003
Author(s):  
Eduard E. Blokhin ◽  
Vladimir A. Irkha ◽  
Alexandr S. Pashchenko
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Solar Energy ◽  
Infrared Spectrum ◽  
Solid Solutions ◽  
Dark Current ◽  
Near Infrared ◽  
Inas Quantum Dots ◽  
Barrier Layers ◽  
Thin Barrier

The results of the presented studies demonstrate the possibility of using two and three component solid solutions, based on elements of the A3B5 groups, as thin barrier layers to cover an array of structured InAs quantum dots for photoactive heterointerfaces of solar energy. When using three-component solid solutions for QD barrier layers, a decrease in the thermionic generation in the near infrared spectrum and a decrease in the dark current of the heterointerface are obtained.

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