Tuning of near infrared excitonic emission from InAs quantum dots by controlling the sub-monolayer coverage

2019 ◽  
Vol 210 ◽  
pp. 311-321 ◽  
Author(s):  
S. Mukherjee ◽  
A. Pradhan ◽  
S. Mukherjee ◽  
T. Maitra ◽  
S. Sengupta ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Inas Quantum Dots ◽  
Excitonic Emission ◽  
Monolayer Coverage

Electrically Driven Near-Infrared Broadband Light Source with Gaussian-Like Spectral Shape Based on Multiple InAs Quantum Dots

2016 ◽  
Vol E99.C (3) ◽  
pp. 381-384 ◽  
Author(s):  
Takuma YASUDA ◽  
Nobuhiko OZAKI ◽  
Hiroshi SHIBATA ◽  
Shunsuke OHKOUCHI ◽  
Naoki IKEDA ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Source ◽  
Near Infrared ◽  
Spectral Shape ◽  
Inas Quantum Dots ◽  
Broadband Light Source

Wideband near-infrared LED with over 1 mW power by stacked InAs quantum dots/GaAs

2012 ◽  
Vol 9 (12) ◽  
pp. 2348-2351 ◽  
Author(s):  
Shingo Fuchi ◽  
Kazuma Tani ◽  
Takanori Arai ◽  
Satoshi Kamiyama ◽  
Yoshikazu Takeda
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Inas Quantum Dots

Influence of Three-Component Barrier Layers on Optical Properties of Photodetectors with Quantum Dots

2021 ◽  
Vol 316 ◽  
pp. 999-1003
Author(s):  
Eduard E. Blokhin ◽  
Vladimir A. Irkha ◽  
Alexandr S. Pashchenko
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Solar Energy ◽  
Infrared Spectrum ◽  
Solid Solutions ◽  
Dark Current ◽  
Near Infrared ◽  
Inas Quantum Dots ◽  
Barrier Layers ◽  
Thin Barrier

The results of the presented studies demonstrate the possibility of using two and three component solid solutions, based on elements of the A3B5 groups, as thin barrier layers to cover an array of structured InAs quantum dots for photoactive heterointerfaces of solar energy. When using three-component solid solutions for QD barrier layers, a decrease in the thermionic generation in the near infrared spectrum and a decrease in the dark current of the heterointerface are obtained.

Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
S. Sengupta ◽  
S.Y. Shah ◽  
N. Halder ◽  
S. Chakrabarti
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Emission Line ◽  
Size Distribution ◽  
Single Layer ◽  
Quantum Dot Lasers ◽  
Narrow Linewidth ◽  
Inas Quantum Dots ◽  
Monolayer Coverage ◽  
Narrow Emission

AbstractEpitaxially grown self-assembled InAs quantum dots (QDs) have found applications in optoelectronics. Efforts are being made to obtain efficient quantum-dot lasers operating at longer telecommunication wavelengths, specifically 1.3 μm and 1.55 μm. This requires narrow emission linewidth from the quantum dots at these wavelengths. In InAs/GaAs single layer quantum dot (SQD) structure, higher InAs monolayer coverage for the QDs gives rise to larger dots emitting at longer wavelengths but results in inhomogeneous dot-size distribution. The bilayer quantum dot (BQD) can be used as an alternative to SQDs, which can emit at longer wavelengths (1.229 μm at 8 K) with significantly narrow linewidth (∼16.7 meV). Here, we compare the properties of single layer and bilayer quantum dots grown with higher InAs monolayer coverage. In the BQD structure, only the top QD layer is covered with increased (3.2 ML) InAs monolayer coverage. The emission line width of our BQD sample is found to be insensitive towards post growth treatments.

Near-Infrared Ultrawide Bandwidth LEDs Using InAs Quantum Dots of Equally Tuned Heights

2012 ◽  
Vol 24 (19) ◽  
pp. 1677-1679
Author(s):  
Sofiane Haffouz ◽  
Pedro J. Barrios ◽  
Daniel Poitras ◽  
Richard Normandin
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Inas Quantum Dots

Optical properties and structure of InAs quantum dots in near-infrared band

2008 ◽  
Vol 1 (1-2) ◽  
pp. 134-137
Author(s):  
Guozhi Jia ◽  
Jianghong Yao ◽  
Yongchun Shu ◽  
Zhanguo Wang
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Near Infrared ◽  
Infrared Band ◽  
Inas Quantum Dots

Monolithically grown multi-color InAs quantum dots as a spectral-shape-controllable near-infrared broadband light source

2013 ◽  
Vol 103 (5) ◽  
pp. 051121 ◽  
Author(s):  
Nobuhiko Ozaki ◽  
Koichi Takeuchi ◽  
Shunsuke Ohkouchi ◽  
Naoki Ikeda ◽  
Yoshimasa Sugimoto ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Source ◽  
Near Infrared ◽  
Spectral Shape ◽  
Inas Quantum Dots ◽  
Broadband Light Source

Near-infrared superluminescent diode using stacked self-assembled InAs quantum dots with controlled emission wavelengths

2014 ◽  
Vol 53 (4S) ◽  
pp. 04EG10 ◽  
Author(s):  
Nobuhiko Ozaki ◽  
Takuma Yasuda ◽  
Shunsuke Ohkouchi ◽  
Eiichiro Watanabe ◽  
Naoki Ikeda ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Inas Quantum Dots ◽  
Superluminescent Diode ◽  
Self Assembled

InP/ZnSe/ZnS quantum dots with strong dual emissions: visible excitonic emission and near-infrared surface defect emission and their application in in vitro and in vivo bioimaging

2017 ◽  
Vol 5 (41) ◽  
pp. 8152-8160 ◽  
Author(s):  
Jie Zhang ◽  
Jie Wang ◽  
Tong Yan ◽  
Yanan Peng ◽  
Dajun Xu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Surface Defect ◽  
Near Infrared ◽  
Defect Emission ◽  
Multi Scale ◽  
Excitonic Emission ◽  
Dual Emissions ◽  
Strong Dual

Unique oil-soluble InP/ZnSe/ZnS QDs with strong visible excitonic and NIR surface defect emissions were synthesized and used in multi-scale bioimaging.

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