DETERMINING THE DEPENDENCE OF PHOTONIC BAND GAP CHARACTERISTICS ON THE MATERIAL REFRACTIVE INDEX

2018 ◽  
Vol 77 (1) ◽  
pp. 39-46
Author(s):  
O. I. Filipenko ◽  
O. M. Donskov
Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 651 ◽  
Author(s):  
Ermolaev ◽  
Kushnir ◽  
Sapoletova ◽  
Napolskii

Photonic crystals based on titanium oxide are promising for optoelectronic applications, for example as components of solar cells and photodetectors. These materials attract great research attention because of the high refractive index of TiO2. One of the promising routes to prepare photonic crystals based on titanium oxide is titanium anodizing at periodically changing voltage or current. However, precise control of the photonic band gap position in anodic titania films is a challenge. To solve this problem, systematic data on the effective refractive index of the porous anodic titanium oxide are required. In this research, we determine quantitatively the dependence of the effective refractive index of porous anodic titanium oxide on the anodizing regime and develop a model which allows one to predict and, therefore, control photonic band gap position in the visible spectrum range with an accuracy better than 98.5%. The prospects of anodic titania photonic crystals implementation as refractive index sensors are demonstrated.


2005 ◽  
Vol 22 (12) ◽  
pp. 3094-3096
Author(s):  
Wang Jian-Feng ◽  
Huang Yi-Dong ◽  
Zhang Wei ◽  
Peng Jiang-De

2001 ◽  
Vol 15 (16) ◽  
pp. 529-534 ◽  
Author(s):  
G. K. JOHRI ◽  
AKHILESH TIWARI ◽  
SAUMYA SAXENA ◽  
MANOJ JOHRI

Mechanisms of the overlapping of gaps due to a refractive index difference minimum and Anderson localization for photonic band gap (PBG) have been used and they give a refractive index contrast difference of less than two percent for X-, L-, and W-points of the Brillouin zone for the pseudogap. Another physical process for the existence of PBG is the use of scattering strength (ε r ≥ 1) for fcc lattice structure. We have found refractive index contrast in the range 2.41–14.21 for the existence of the complete photonic band gap for bound photons (ε r ≥ 1). The lowest limit to yield a gap is 2.41 for valence photons (ε r = 1) at volume filling fraction 85.5% for spherical air atoms and at 14.5% for dielectric spheres. This work is reported for the first time and it is useful for maintaining connectivity and for easier fabrication of photonic crystals.


2004 ◽  
Vol 820 ◽  
Author(s):  
Koichi Awazu ◽  
Makoto Fujimaki ◽  
Xiaomin Wang ◽  
Akihide Sai ◽  
Yoshimichi Ohki

AbstractTwo dimensional photonic crystals of titanium dioxide is expected to have many advantage compared with photonic crystals of semiconductors, e.g., silicon and GaAs. For example, low optical loss in the near infrared region used for optical communication, low thermal expansion, and its refractive index which is close to that for optical fiber are attractive advantages. However, it is difficult to create micro-nano structure in titanium dioxide because micro-fabrication technique for semiconductor is not available for titanium dioxide. As the first step we calculated photonic band gap of titanium dioxide rod-slab on SiO2. Also, band gap percent against thickness of the rod-slab was examined. Finally, we confirmed the most suitable structure of 2D photonic crystals. Deep x-ray lithography technique was employed for create a very deep and precise template of PMMA. Then, liquid-phase deposition was used to faithfully deposit a tightly packed layer of titanium oxide onto the template. Finally, the template is selectively removed to obtain a photonic nano-structure. We also calculate photonic band gap on the 3D-structure of TiO2. A template for the most appropriate structure was fabricated by the method proposed by Yablonovitch. By using of the same method, it was successful to obtain 3D structure of TiO2. Refractive index of obtained TiO2 followed by heating at 700°C was determined to 2.5 which is close to that for anatase phase.


Optik ◽  
2014 ◽  
Vol 125 (8) ◽  
pp. 1914-1917 ◽  
Author(s):  
Haitao Yan ◽  
Zhi Zhang ◽  
Xiaoyan Zhao ◽  
Zhiqiang Zhen ◽  
Hui Hao ◽  
...  

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