The forward steady-state behaviour of a one-dimensional abrupt p+-n junction germanium diode at zero and at low to high injection levels is analysed. For this purpose the numerical integration of the current differential equations, the continuity equations, and Poisson’s differential equation is performed not only inside the space-charge layer but also along the quasineutral regions of the diode satisfying the boundary and continuity conditions. The integration is made on a digital computer without applying the Boltzmann equilibrium approximation in the space-charge layer and the space-charge neutrality approximation in the quasineutral regions. Furthermore, the acoustical and optical mode scattering, the ionized impurity scattering, and the Hall-Shockley-Read and Auger recombination processes are included in the calculation. The method of solution applied differs from those already available in the literature and permits the “exact” computation of the space-charge density inside the relatively long (compared with the Debye length) quasineutral p and n regions of the diode considered. The numerical results for the hole and electron concentration distributions, the electric field distributions, the electron current density distributions, the electrostatic potential distributions and the space-charge density distributions are reported for five values of the total current density across the p-n junction. The comparison of the obtained numerical solutions with the closed analytical solutions for zero bias (as a test of the computer program) on the one side and of the computed current/voltage characteristic of the p-n junction with experimental values on the other side shows satisfactory agreement.
On the dynamics of the space-charge layer inside the nozzle of a cutting torch and its relation with the “non-destructive” double-arcing phenomenon
