scholarly journals A Look in the (Driver’s) Mirror: Use of Portable Electronic Devices While Driving 
by the Driver Safety Research Community

2011 ◽  
Author(s):  
Neil Lerner ◽  
Emanuel Robinson
Keyword(s):  
Electronic Devices ◽  
Research Community ◽  
Driver Safety ◽  
Safety Research ◽  
Mirror Use

Atom-probe analysis of the solid-liquid interface

1995 ◽  
Vol 53 ◽  
pp. 676-677
Author(s):  
J.A. Panitz
Keyword(s):  
Molecular Level ◽  
Selective Adsorption ◽  
Electronic Devices ◽  
Atom Probe ◽  
Chemical Agent ◽  
Hostile Environment ◽  
Solid Interface ◽  
Solid Liquid Interface ◽  
Solid Liquid ◽  
Chemically Selective

The first few atomic layers of a solid can form a barrier between its interior and an often hostile environment. Although adsorption at the vacuum-solid interface has been studied in great detail, little is known about adsorption at the liquid-solid interface. Adsorption at a liquid-solid interface is of intrinsic interest, and is of technological importance because it provides a way to coat a surface with monolayer or multilayer structures. A pinhole free monolayer (with a reasonable dielectric constant) could lead to the development of nanoscale capacitors with unique characteristics and lithographic resists that surpass the resolution of their conventional counterparts. Chemically selective adsorption is of particular interest because it can be used to passivate a surface from external modification or change the wear and the lubrication properties of a surface to reflect new and useful properties. Immunochemical adsorption could be used to fabricate novel molecular electronic devices or to construct small, “smart”, unobtrusive sensors with the potential to detect a wide variety of preselected species at the molecular level. These might include a particular carcinogen in the environment, a specific type of explosive, a chemical agent, a virus, or even a tumor in the human body.

High-voltage Electron Microscopy: Where it is and where it may be going

1995 ◽  
Vol 53 ◽  
pp. 80-81
Author(s):  
Charles W. Allen
Keyword(s):  
Electron Microscopy ◽  
High Voltage ◽  
Construction Cost ◽  
Research Community ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
High Voltage Electron ◽  
Materials Research

High voltage TEMs were introduced commercially thirty years ago, with the installations of 500 kV Hitachi instruments at the Universities of Nogoya and Tokyo. Since that time a total of 51 commercial instruments, having maximum accelerating potentials of 0.5-3.5 MV, have been delivered. Prices have gone from about a dollar per volt for the early instruments to roughly twenty dollars per volt today, which is not so unreasonable considerinp inflation and vastly improved electronics and other improvements. The most expensive HVEM (the 3.5 MV instrument at Osaka University) cost about 5 percent of the construction cost of the USA's latest synchrotron.Table 1 briefly traces the development of HVEM in this country for the materials sciences. There are now only three available instruments at two sites: the 1.2 MeV HVEM at Argonne National Lab, and 1.0 and 1.5 MeV instruments at Lawrence Berkeley National Lab. Fortunately, both sites are user facilities funded by DOE for the materials research community.

Study of dislocation loops in Arsenic-Rich as-grown GaAs

1987 ◽  
Vol 45 ◽  
pp. 350-351
Author(s):  
Byung-Teak Lee
Keyword(s):  
Point Defects ◽  
Electronic Devices ◽  
Arsenic Concentration ◽  
Stoichiometric Compound ◽  
Dislocation Loops ◽  
Gaas Crystal ◽  
Ion Milling ◽  
Transmission Electron ◽  
Arsenic Source ◽  
High Arsenic

Grown-in dislocations in GaAs have been a major obstacle in utilizing this material for the potential electronic devices. Although it has been proposed in many reports that supersaturation of point defects can generate dislocation loops in growing crystals and can be a main formation mechanism of grown-in dislocations, there are very few reports on either the observation or the structural analysis of the stoichiometry-generated loops. In this work, dislocation loops in an arsenic-rich GaAs crystal have been studied by transmission electron microscopy.The single crystal with high arsenic concentration was grown using the Horizontal Bridgman method. The arsenic source temperature during the crystal growth was about 630°C whereas 617±1°C is normally believed to be optimum one to grow a stoichiometric compound. Samples with various orientations were prepared either by chemical thinning or ion milling and examined in both a JEOL JEM 200CX and a Siemens Elmiskop 102.

Behavioral and emotional differences between children of divorce and children from intact families: Clinical significance and mediating processes *This study is part of a dissertation () supported from the German research community.

2002 ◽  
Vol 61 (1) ◽  
pp. 5-14 ◽  
Author(s):  
Andreas Schick
Keyword(s):  
Self Esteem ◽  
Research Community ◽  
Children Of Divorce ◽  
Group Differences ◽  
Significant Group ◽  
Intact Families ◽  
Divorce Adjustment ◽  
Theoretical Assumptions ◽  
German Research ◽  
Clinically Significant

The following study is based on a sample of 241 9-13-year-old children (66 children from divorced parents, 175 children from non divorced parents). They were examined for differences regarding anxiety, self-esteem, different areas of competence, and degree of behavior problems. With a focus on the children’s experiences, the clinically significant differences were examined. Clinically significant differences, revealing more negative outcomes for the children of divorce, were only found for social anxiety and unstable performance. The frequency of clinical significant differences was independent of the length of time the parents had been separated. The perceived destructiveness of conflict between the parents one of four facets of interparental conflict in this study functioned as a central mediator of the statistically significant group differences. The children’s perception of the father’s social support was a less reliable indicator of variance. Further studies should try to make underlying theoretical assumptions about the effects of divorce more explicit, to distinguish clearly between mediating variables, and to investigate them with respect to specific divorce adjustment indicators.

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