scholarly journals Density and surface tension of aqueous solutions of adjuvants used for tank-mixes with pesticides

2012 ◽  
Vol 58 (No. 12) ◽  
pp. 568-572 ◽  
Author(s):  
J. Janků ◽  
L. Bartovská ◽  
J. Soukup ◽  
M. Jursík ◽  
K. Hamouzová

Adjuvants are surface active agents that are added to pesticide formulations or tank-mix to facilitate the mixing, application, or efficacy of these products. Addition of adjuvants changes the physico-chemical properties of spray liquid. In this work, we have focused in particular on surface tension and density of aqueous solutions of different adjuvants registered for mixing with herbicides. Eleven different adjuvants were subject of this study under laboratory conditions. An equation which enables determination of density of aqueous solutions in concentration range of 0–15 g/kg was designed. Average difference between the experimental and calculated density values amounts to ± 0.006%. The concentration dependence of surface tension was utilized to determine the critical micelle concentration (cmc). Evidently, the cmc of most tested adjuvants was lower than the amount recommended by manufacturer, especially in case of adjuvants Dedal 90 EC and Mero 33528. For adjuvant Trend 90 EC the recommended rate is even lower than that obtained for the cmc. Maximum reduction of the surface tension of water was achieved with adjuvants Silwet L-77 and Break Superb.    

Open Physics ◽  
2011 ◽  
Vol 9 (2) ◽  
Author(s):  
Krzysztof Rola ◽  
Irena Zubel

AbstractThe influence of alcohol additives on etch rate anisotropy of Si(hkl) planes has been studied. The etching processes were carried out in 3 and 5 M KOH aqueous solutions saturated and non-saturated with alcohols. Isopropanol, 1-propanol and tert-butanol were examined. It has been showed that the etching process cannot be controlled only by the surface tension of the solution. Saturation of the etching solution with alcohols modifies etch rate anisotropy, lowering the ratio of the etch rate of (110) and vicinal planes to the etch rate of (100) plane. The morphology of Si(hkl) planes etched in 3 M KOH solution saturated with tert-butyl alcohol has been studied in detail. Smooth (331) and (221) planes have been achieved in this solution. The (100) plane turned out to be densely covered by hillocks, opposite to the (100) plane etched in weak-alkaline solution saturated with isopropanol. To explain this phenomenon, the mechanism of hillocks formation on Si(100) surface has been proposed.


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