Information Transmission by Entropy Acoustic Wave in a Chalcogenide Glassy Semiconductor Film

2020 ◽  
Vol 22 (5) ◽  
pp. 263-271
Author(s):  
Yu.V. Anufriev ◽  
◽  
E.V. Zenova ◽  
E.N. Voronkov ◽  
A.R. Fajrushin ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Information Transmission ◽  
Semiconductor Film ◽  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

Dispersion of the refractive index of a samarium-doped Se95Te5 chalcogenide glassy semiconductor

2015 ◽  
Vol 49 (7) ◽  
pp. 949-952 ◽  
Author(s):  
S. U. Atayeva ◽  
S. I. Mekhtiyeva ◽  
A. I. Isayev
Keyword(s):  
Refractive Index ◽  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity

2019 ◽  
Vol 53 (11) ◽  
pp. 1507-1510
Author(s):  
S. N. Garibova ◽  
A. I. Isayev ◽  
S. I. Mekhtiyeva ◽  
S. U. Atayeva
Keyword(s):  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

Evidence of Schottky barrier formation at contact of metal with chalcogenide glassy semiconductor

1984 ◽  
Vol 84 (1) ◽  
pp. 343-352 ◽  
Author(s):  
A. A. Simashkevich ◽  
S. D. Shutov
Keyword(s):  
Schottky Barrier ◽  
Barrier Formation ◽  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

scholarly journals Структура халькогенидного стеклообразного полупроводника Se-=SUB=-95-=/SUB=-As-=SUB=-5-=/SUB=-, легированного примесью EuF-=SUB=-3-=/SUB=-

2019 ◽  
Vol 53 (11) ◽  
pp. 1540
Author(s):  
С.Н. Гарибова ◽  
А.И. Исаев ◽  
С.И. Мехтиева ◽  
С.У. Атаева
Keyword(s):  
Raman Scattering ◽  
Local Structure ◽  
Amorphous Matrix ◽  
Chemical Activity ◽  
Chemical Bonds ◽  
Structural Elements ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

The local structure of film samples of chalcogenide glassy semiconductor Se95As5 and Se95As5(EuF3)x (x = 0.01 ÷ 1 at%) have been studied by X-ray diffraction and Raman scattering. The ‘‘quasi-period’’ of the structure, the correlation length, the structural elements and chemical bonds that form the amorphous matrix of the materials studied have been determined. Interpretation of results obtained has been carried out within the framework of the Elliot voidscluster model, taking into account the chemical activity of europium ions.

Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor

2019 ◽  
Vol 53 (12) ◽  
pp. 1651-1655
Author(s):  
N. V. Sovtus ◽  
K. D. Mynbaev
Keyword(s):  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

Acoustic Wave on Piezoelectric Semiconductor Film via Large-scale Molecular Dynamics Analysis

2014 ◽  
Vol 2014.27 (0) ◽  
pp. 318-319
Author(s):  
Ryo Hikata ◽  
Kenji Tsuruta ◽  
Atsushi Ishikawa
Keyword(s):  
Molecular Dynamics ◽  
Acoustic Wave ◽  
Large Scale ◽  
Semiconductor Film ◽  
Dynamics Analysis ◽  
Piezoelectric Semiconductor

A Covert Information Transmission Scheme Based on High Frequency Acoustic Wave Channel

2020 ◽  
pp. 203-214
Author(s):  
Huiling Li ◽  
Yayi Zou ◽  
Wenjia Yi ◽  
Ziyi Ye ◽  
Yi Ma
Keyword(s):  
Acoustic Wave ◽  
Information Transmission ◽  
High Frequency ◽  
Transmission Scheme ◽  
Wave Channel

Conductivity of layers of a chalcogenide glassy semiconductor Ge2Sb2Te5 in high electric fields

2009 ◽  
Vol 43 (10) ◽  
pp. 1343-1346 ◽  
Author(s):  
É. A. Lebedev ◽  
S. A. Kozykhin ◽  
N. N. Konstantinova ◽  
L. P. Kazakova
Keyword(s):  
Electric Fields ◽  
Glassy Semiconductor ◽  
High Electric Fields ◽  
Chalcogenide Glassy Semiconductor
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