Short-wave boundary of applicability of relief-phase reflecting holograms on a thin film of a chalcogenide glassy semiconductor

2013 ◽  
Author(s):  
Sergey N. Koreshev ◽  
Vladislav P. Ratushnyi
Keyword(s):  
Thin Film ◽  
Short Wave ◽  
Glassy Semiconductor ◽  
Wave Boundary ◽  
Chalcogenide Glassy Semiconductor ◽  
Relief Phase

Optical Characteristics of Silicon Thin Film in Short-Wave Infrared Band and 1.30 μm Bandpass Optical Filter

2012 ◽  
Vol 32 (10) ◽  
pp. 1031001
Author(s):  
段微波 Duan Weibo ◽  
庄秋慧 Zhuang Qiuhui ◽  
李大琪 Li Daqi ◽  
陈刚 Chen Gang ◽  
余德明 Yu Deming ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Filter ◽  
Short Wave ◽  
Optical Characteristics ◽  
Silicon Thin Film ◽  
Infrared Band ◽  
Short Wave Infrared

Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity

2019 ◽  
Vol 53 (11) ◽  
pp. 1507-1510
Author(s):  
S. N. Garibova ◽  
A. I. Isayev ◽  
S. I. Mekhtiyeva ◽  
S. U. Atayeva
Keyword(s):  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

scholarly journals Структура халькогенидного стеклообразного полупроводника Se-=SUB=-95-=/SUB=-As-=SUB=-5-=/SUB=-, легированного примесью EuF-=SUB=-3-=/SUB=-

2019 ◽  
Vol 53 (11) ◽  
pp. 1540
Author(s):  
С.Н. Гарибова ◽  
А.И. Исаев ◽  
С.И. Мехтиева ◽  
С.У. Атаева
Keyword(s):  
Raman Scattering ◽  
Local Structure ◽  
Amorphous Matrix ◽  
Chemical Activity ◽  
Chemical Bonds ◽  
Structural Elements ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

The local structure of film samples of chalcogenide glassy semiconductor Se95As5 and Se95As5(EuF3)x (x = 0.01 ÷ 1 at%) have been studied by X-ray diffraction and Raman scattering. The ‘‘quasi-period’’ of the structure, the correlation length, the structural elements and chemical bonds that form the amorphous matrix of the materials studied have been determined. Interpretation of results obtained has been carried out within the framework of the Elliot voidscluster model, taking into account the chemical activity of europium ions.

Регистрация высокочастотных рельефно-фазовых голографических структур на фотоматериале ПФГ-04

2021 ◽  
Vol 47 (21) ◽  
pp. 13
Author(s):  
Н.М. Ганжерли ◽  
С.Н. Гуляев ◽  
И.А. Маурер ◽  
А.В. Архипов
Keyword(s):  
Spatial Frequency ◽  
Uv Radiation ◽  
Diffraction Efficiency ◽  
High Frequency ◽  
Short Wave ◽  
Destructive Effect ◽  
Holographic Gratings ◽  
New Variant ◽  
First Time ◽  
Relief Phase

A new variant of processing photographic plates for holography based on dichromed gelatin PFG-04 (produced by JSC "Slavich Company", Pereslavl-Zalessky) for the manufacture of high-frequency relief–phase holographic gratings with a spatial frequency up to 1500 mm-1 is proposed. The technology is based on the selective destructive effect of short-wave UV radiation on gelatin and subsequent etching of the layer with various reagents. For the first time, relief-phase high-frequency holographic gratings with a maximum diffraction efficiency of 67% were obtained on PFG-04 photographic plates.

scholarly journals Solid‐State Thin‐Film Broadband Short‐Wave Infrared Light Emitters

2020 ◽  
Vol 32 (45) ◽  
pp. 2003830
Author(s):  
Santanu Pradhan ◽  
Mariona Dalmases ◽  
Gerasimos Konstantatos
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Short Wave ◽  
Infrared Light ◽  
Light Emitters ◽  
Short Wave Infrared
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