Narrow Band Gap Ternary Absorber Layer for Solar Cell for Small Business Enterprises in Equatorial Africa

In this paper, the performance of copper-indium-gallium-diselenide Cu(In,Ga)Se2 solar cell, with ZnO window layer, ZnSe buffer layer, CIGS absorber layer and InGaP reflector layer was studied. The study was performed using the TCAD Silvaco simulator. The effects of grading the band gap of CIGS absorber layer, the various thicknesses and doping concentrations of different layers have been investigated. By optimizing the solar cell structure, we have obtained a maximum open circuit voltage of 0.91901 V, a short circuit current density of 39.89910 mA/cm2, a fill factor (FF) of 86.67040% and an efficiency of 31.78% which is much higher than the values for similar CIGS solar cells reported so far.

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Effect of the absorber layer band-gap on CIGS solar cell

Chinese Journal of Physics ◽

10.1016/j.cjph.2017.01.011 ◽

2017 ◽

Vol 55 (4) ◽

pp. 1127-1134 ◽

Cited By ~ 14

Author(s):

Abderrahmane Belghachi ◽

Naima Limam

Keyword(s):

Solar Cell ◽

Band Gap ◽

Absorber Layer ◽

Cigs Solar Cell

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Performance Enhancement by the Introduction of Additional Narrow Band Gap Bottom Layer of aSi0.64Ge0.36: H on Proposed p + aSi:H/i-aSi: H/n+ aSi0.73Ge0.27: H Thin Film Solar Cells

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2020.2761 ◽

2020 ◽

Vol 15 (4) ◽

pp. 487-497 ◽

Cited By ~ 1

Author(s):

J. Fatima Rasheed ◽

V. Suresh Babu

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Amorphous Silicon ◽

Band Gap ◽

Current Density ◽

Narrow Band ◽

Bottom Layer ◽

Maximum Power ◽

Maximum Power Point ◽

Power Point

This work is the continuation of our previous work entitled "Investigations on optical, material and electrical properties of aSi:H and aSiGe:H in making proposed n+aSi:H/iaSi:H/p+aSiGe:H graded band gap solar cells." In this work, we present an additional bottom layer made of increased germanium content: aSi0.64Ge0.36:H to the previously recommended p+aSi:H/i-aSi:H/n+aSi0.73Ge0.27:H photovoltaic cell to strengthen the absorption spectrum and thereby boosting the attainment of the solar cell. Moreover, the overall active layer thickness is reduced from 430 nm of previous work to 395 nm of proposed work. This work includes the fabrication of samples of epitaxially grown aSiGe:H thin films of varying band gap made with Plasma Enhanced Chemical Vapour Deposition (PECVD) technique succeeded by their characterisation. The establishment of band gap tailoring by varying the germane (GeH4) gas flow rate is thoroughly investigated through optical characterisation. The growth chemistry of PECVD made aSi0.64Ge0.36:H layer has been analysed and the presence of respective radicals has been verified using Fourier Transform Infra Red (FTIR) spectroscopy. In accordance with the measured band gaps, p+ aSi:H/i-aSi:H/n+aSi0.73Ge0.27:H/naSi0.64Ge0.36:H solar cell has been proposed. A comprehensive inquiry on optimisation of the recommended structure has been made by varying the optical band gap and thickness of the bottom most aSi0.64Ge0.36:H layer of the structure. All the cell parameters including open circuit voltage (Voc), short circuit current density (Jsc), maximum power point voltage (Vm), maximum power point current density (Jm), Fill factor (FF) and conversion efficiency (η) has been calculated using SCAPS1D solar simulator. Furthermore, C–V characteristics and Mott-Schottky plot of the proposed structure has been evaluated. The introduction of narrow band gap amorphous silicon germanium (aSi0.64Ge0.36:H) at the bottom has remarkably enhanced Jsc and η to 15.54 mA/cm2 and 15.15% respectively, which is better compared to reported amorphous silicon photovoltaic cells having single junction.

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