scholarly journals Laser ablation of thin films of molybdenum for the fabrication of contact masks elements of diffractive optics with high resolution

Author(s):  
S.D. Poletaev ◽  
◽  
Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)


2004 ◽  
Vol 70 (12) ◽  
Author(s):  
Fumiyasu Oba ◽  
Hiromichi Ohta ◽  
Yukio Sato ◽  
Hideo Hosono ◽  
Takahisa Yamamoto ◽  
...  

1999 ◽  
Vol 79 (6) ◽  
pp. 1423-1442 ◽  
Author(s):  
G. Lucadamo ◽  
M. Watanabe ◽  
K. Barmak ◽  
D. B. Williams ◽  
C. Michaelsen ◽  
...  

1998 ◽  
Author(s):  
Ileana Apostol ◽  
Razvan Stoian ◽  
C. Luculescu ◽  
Razvan V. Dabu ◽  
Aurel Stratan ◽  
...  

1993 ◽  
Vol 6 (3) ◽  
pp. 429-432 ◽  
Author(s):  
KENJIN HIGAKI ◽  
CHIAKI NAGAI ◽  
OSAMU MURATA ◽  
HAYAMI ITOH

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