scholarly journals Simulation of Effect of Ar Flow Rate on Silicon Ingot Growth in Directional Solidification System

2021 ◽  
Vol 33 (8) ◽  
pp. 2607
Author(s):  
Xueyan Li ◽  
Yao-Chung Yang ◽  
Chao-Ming Hsu ◽  
Hsien-Wei Tseng ◽  
Jie Zhang ◽  
...  
Keyword(s):  
Directional Solidification ◽  
Flow Rate ◽  
Silicon Ingot

Resistivity Distribution Characteristics of Metallurgical Silicon Ingot after Directional Solidification

2011 ◽  
Vol 675-677 ◽  
pp. 109-112
Author(s):  
Shu Ang Shi ◽  
Wei Dong ◽  
Shi Hai Sun ◽  
Yi Tan ◽  
Guo Bin Li ◽  
...  
Keyword(s):  
Directional Solidification ◽  
Vertical Section ◽  
Growth Direction ◽  
Silicon Ingot ◽  
Metallurgical Silicon ◽  
High Impurity ◽  
Polarity Transition ◽  
High Impurity Concentration ◽  
Solid Liquid Interface ◽  
Solid Liquid

The distribution of resistivity, impurity and polarity in multicrystalline silicon ingot prepared by directional solidification method was detected. The effect of impurity distribution on resistivity was also researched. The results show that the shapes of equivalence line of resistivity in the cross section and vertical section of the silicon ingot depend on the solid-liquid interface. The resistivity in the vertical section increases with the increasing of solidified height at the beginning of solidification and reaches to maximum at the polarity transition point, then decreases rapidly with the increasing of solidified height and tends to zero on the top of the ingot because of the high impurity concentration. Study proves that the variation of resistivity in the vertical section is mainly relevant to the concentration distribution of the impurities such as Al, B and P in the growth direction.

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