P-10: Mechanism of Lowering Contact Resistance between Transparent Conducting Oxide Layer and Mo/Al/Mo Layer in TFT-LCDs

2005 ◽  
Vol 36 (1) ◽  
pp. 261
Author(s):  
Chang-Oh Jeong ◽  
Yang-Ho Bae ◽  
Beom-Seok Cho ◽  
Je-Hun Lee ◽  
Min-Seok Oh ◽  
...  
2019 ◽  
Vol 27 (6) ◽  
pp. 491-500 ◽  
Author(s):  
Takashi Koida ◽  
Jiro Nishinaga ◽  
Yuko Ueno ◽  
Hirofumi Higuchi ◽  
Hideki Takahashi ◽  
...  

2012 ◽  
Vol 520 (6) ◽  
pp. 2115-2118 ◽  
Author(s):  
Dae-Hyung Cho ◽  
Yong-Duck Chung ◽  
Kyu-Seok Lee ◽  
Nae-Man Park ◽  
Kyung-Hyun Kim ◽  
...  

Author(s):  
Jeffery P. Huynh ◽  
Joseph P. Shannon ◽  
Richard W. Johnson ◽  
Mike Santana ◽  
Thomas Y. Chu ◽  
...  

Abstract Modifications directly to a transistor’s source/drain and polysilicon gate through the backside of a SOI device were made. Contact resistance data was obtained by creating contacts through the buried oxide layer of a manufactured test structure. A ring oscillator circuit was modified and the shift in oscillator frequency was measured. Finally, cross section images of the FIB created contacts were presented in the paper to illustrate the entire process.


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