scholarly journals Explore the Parametric Variations on Different Doping Profiles of MOSFET for Analog and Digital Applications

2018 ◽  
Author(s):  
Muhammad S Ullah ◽  
Emadelden Fouad ◽  
Xhino M. Domi
Keyword(s):  
Circuit Design ◽  
Integrated Circuit ◽  
Doping Profile ◽  
Integrated Circuit Design ◽  
Design Engineers ◽  
Delta Doping ◽  
Analog Performance ◽  
Parasitic Effects ◽  
Doping Profiles ◽  
Uniform Doping

The VLSI industry is facing parasitic effects that trouble development in the nanoscale domain. However, instead of replacing the traditional MOSFET design, it would be more advantageous to apply different doping profiles and discerning which deal with specific parasitic effects the best. With a review of Gaussian doping, Uniform doping, and Delta doping profiles and analysis of the FET technology characteristics that use these doping profiles, a comparison can be made among them for integrated circuit design engineers. These doping profiles are compared based on how well they perform against non-ideal and ideal environments. Also, both digital and analog performance are measured to ensure the uniqueness of each doping profile that is present. After getting a list of benefits from each doping profile, it is derived to determine which doping profile works best against a host of parasitic effects and what type of application do these doping profiles have

A Case Study of Defects Due to Process-Design Interaction in Nano Scale Technology

2007 ◽  
Author(s):  
Hung-Sung Lin ◽  
Ying-Chin Hou ◽  
Juimei Fu ◽  
Mong-Sheng Wu ◽  
Vincent Huang ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Circuit Design ◽  
Process Design ◽  
Integrated Circuit ◽  
Photon Emission ◽  
Integrated Circuit Design ◽  
Nano Scale ◽  
Leakage Path ◽  
Related Defect

Abstract The difficulties in identifying the precise defect location and real leakage path is increasing as the integrated circuit design and process have become more and more complicated in nano scale technology node. Most of the defects causing chip leakage are detectable with only one of the FA (Failure Analysis) tools such as LCD (Liquid Crystal Detection) or PEM (Photon Emission Microscope). However, due to marginality of process-design interaction some defects are often not detectable with only one FA tool [1][2]. This paper present an example of an abnormal power consumption process-design interaction related defect which could only be detected with more advanced FA tools.

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