scholarly journals Determination of impurities in high-purity silicon nitride by ICP-AES after coprecipitation with lanthanum hydroxide.

1990 ◽  
Vol 39 (1) ◽  
pp. 49-54 ◽  
Author(s):  
Yoshifumi HARADA ◽  
Natsuko KURATA ◽  
Giichi FURUNO
2015 ◽  
Vol 30 (4) ◽  
pp. 909-915 ◽  
Author(s):  
Zheng Wang ◽  
Junye Zhang ◽  
Guoxia Zhang ◽  
Deren Qiu ◽  
Pengyuan Yang

A simple, rapid and reliable method was developed for the determination of trace impurities in high-purity silicon nitride (nm- and μm-sized) by ICP-OES using a slurry nebulization technique.


2014 ◽  
Vol 33 (4) ◽  
pp. 363-368 ◽  
Author(s):  
Halvor Dalaker ◽  
Merete Tangstad

AbstractThe interactions between carbon and nitrogen in liquid silicon have been studied experimentally. High purity silicon was melted in silicon nitride crucibles under an Ar atmosphere with a graphite slab inserted in the crucible prior to melting as a carbon source. The system was thus simultaneously equilibrated with Si3N4 and SiC. Samples were extracted in the temperature range 1695–1798 K and analyzed using Leco.It was observed that the simultaneous saturation of nitrogen and carbon caused a significant increase in the solubilities of both elements. The interaction parameters were derived as The solubility of carbon in liquid silicon as a function of temperature and nitrogen content was found to follow: And the solubility of nitrogen in liquid silicon found to follow:


1988 ◽  
Vol 37 (10) ◽  
pp. T97-T99
Author(s):  
Susumu NAKAMURA ◽  
Kouichi KAWAMURA ◽  
Tetsuya INAGAKI ◽  
Masaaki KUBOTA

1985 ◽  
Vol 34 (12) ◽  
pp. 766-771 ◽  
Author(s):  
Yoshiko MIYAGAWA ◽  
Kazuo SAITO ◽  
Hiroaki NIWA ◽  
Toshio ISHIZUKA ◽  
Soji MIYAGAWA

1990 ◽  
Vol 39 (6) ◽  
pp. T83-T87 ◽  
Author(s):  
Hiroyasu YOSHIKAWA ◽  
Youichi ISHIBASHI ◽  
Naoki GUNJI ◽  
Kouichi SASAYAMA ◽  
Takeshi MISUMI

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