The Interactions of Carbon and Nitrogen in Liquid Silicon

2014 ◽  
Vol 33 (4) ◽  
pp. 363-368 ◽  
Author(s):  
Halvor Dalaker ◽  
Merete Tangstad
Keyword(s):  
Silicon Nitride ◽  
Carbon Source ◽  
Nitrogen Content ◽  
High Purity ◽  
Liquid Silicon ◽  
Interaction Parameters ◽  
Carbon And Nitrogen ◽  
Temperature Range ◽  
High Purity Silicon

AbstractThe interactions between carbon and nitrogen in liquid silicon have been studied experimentally. High purity silicon was melted in silicon nitride crucibles under an Ar atmosphere with a graphite slab inserted in the crucible prior to melting as a carbon source. The system was thus simultaneously equilibrated with Si3N4 and SiC. Samples were extracted in the temperature range 1695–1798 K and analyzed using Leco.It was observed that the simultaneous saturation of nitrogen and carbon caused a significant increase in the solubilities of both elements. The interaction parameters were derived as The solubility of carbon in liquid silicon as a function of temperature and nitrogen content was found to follow: And the solubility of nitrogen in liquid silicon found to follow:

Direct determination of trace impurities in high-purity silicon nitride by axial viewed inductively coupled plasma optical emission spectrometry using a slurry nebulization technique

2015 ◽  
Vol 30 (4) ◽  
pp. 909-915 ◽  
Author(s):  
Zheng Wang ◽  
Junye Zhang ◽  
Guoxia Zhang ◽  
Deren Qiu ◽  
Pengyuan Yang
Keyword(s):  
Silicon Nitride ◽  
High Purity ◽  
Inductively Coupled Plasma ◽  
Direct Determination ◽  
Optical Emission ◽  
Emission Spectrometry ◽  
Trace Impurities ◽  
High Purity Silicon ◽  
Slurry Nebulization

A simple, rapid and reliable method was developed for the determination of trace impurities in high-purity silicon nitride (nm- and μm-sized) by ICP-OES using a slurry nebulization technique.

Microstructure and grain-boundary characterization of HIP'ed high-purity silicon nitride

1993 ◽  
Vol 28 (15) ◽  
pp. 4217-4222 ◽  
Author(s):  
P. Lu ◽  
S. C. Danforth ◽  
W. T. Symons
Keyword(s):  
Silicon Nitride ◽  
Grain Boundary ◽  
High Purity ◽  
High Purity Silicon

Low Temperature Direct Reactions Between Elemental Silicon and Liquid Ammonia or Amines for Ceramics and Chemical Intermediates

1988 ◽  
Vol 121 ◽  
Author(s):  
Eloise A. Pugar ◽  
Peter E.D. Morgan
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Low Temperature ◽  
High Purity ◽  
Liquid Ammonia ◽  
Product Formation ◽  
Elemental Silicon ◽  
High Purity Silicon ◽  
Direct Reactions ◽  
Uv Raman

ABSTRACTDirect processes that may be used to manufacture high purity silicon nitride or silicon carbide are described. Elemental silicon has been found to react directly with liquid ammonia and amines at low temperature to yield compounds for both the ceramic and chemical industries. Silicon-amine direct reactions, previously thought not to occur, were investigated by using 29Si NMR, IR, UV, Raman, XRD, ICP, EDS and TGA methods to detect and characterize product formation. The [Si,N,H] and [Si,C,N,H] products transform to silicon nitride or silicon carbide respectively when heated above 1300°C.

Grain-Boundary Relaxation in High-Purity Silicon Nitride

1996 ◽  
Vol 79 (9) ◽  
pp. 2237-2246 ◽  
Author(s):  
Giuseppe Pezzotti ◽  
Ken'ichi Ota ◽  
Hans-Joachim Kleebe
Keyword(s):  
Silicon Nitride ◽  
Grain Boundary ◽  
High Purity ◽  
High Purity Silicon ◽  
Boundary Relaxation
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