A Practical Approach To Prevent Formation Damage by High-Density Brines During the Completion Process

Author(s):  
S.K. Baijal ◽  
L.R. Houchin ◽  
K.L. Bridges



1993 ◽  
Vol 323 ◽  
Author(s):  
David B. Wrisley

AbstractWith advances in semiconductor technology straining the ability of packaging to keep pace, conventional electrical connectors cannot always meet emerging requirements in interconnection density and signal transmission speeds.Connectors using flexible etched circuits (FEC) can provide interconnection densities of up to 200 lines per inch and high transmission quality for signals with 250-picosecond risetimes. A practical connector design meeting these density and speed goals depends on careful consideration of connector and system tolerances, ease of application, manufacturability, and material properties.This paper discusses a practical approach to an FEC-based connector and the influence of material properties on connector performance.





1986 ◽  
Vol 1 (06) ◽  
pp. 432-436 ◽  
Author(s):  
L.N. Morgenthaler


1990 ◽  
Vol 5 (02) ◽  
pp. 175-179 ◽  
Author(s):  
Marin Cikes ◽  
Branka Vranjesevic ◽  
Mihovil Tomic ◽  
Oljeg Jamnicky


1998 ◽  
Author(s):  
William E. Foxenberg ◽  
Syed A. Ali ◽  
Minglie Ke ◽  
David C. Shelby ◽  
Jack W. Burman


2021 ◽  
Vol 73 (03) ◽  
pp. 67-68
Author(s):  
Chris Carpenter

This article, written by JPT Technology Editor Chris Carpenter, contains highlights of paper SPE 199243, “First Use of a Newly Developed High-Density Brine in an Oil-Based Screen Running Fluid in a Multilateral Extended-Reach Well: Fluid Qualification, Formation Damage Testing, and Field Application, Offshore Norway,” by Bjarne Salmelid, Morten Strand, and Duncan Clinch, Halliburton, et al., prepared for the 2020 SPE International Conference and Exhibition on Formation Damage Control, Lafayette, Louisiana, 19–21 February. The paper has not been peer reviewed. When used for running sand-control screens, low-solids, oil-based completion fluids (LSOBCF) maintain reservoir wellbore stability and integrity while minimizing the potential risks of losses, screen plugging, completion damage, and productivity impairment. Until now, using LSOBCF as a screen running fluid has been limited by fluid density. The complete paper discusses the design, qualification, and first deployment of an LSOBCF that incorporates a newly developed, high-density brine as the internal phase to extend the density limit. Field History This new field’s well forms part of the greater Alvheim area located in the central part of the North Sea, close to the UK sector. The formations discussed present excellent reservoir characteristics but also significant drilling challenges. The intruded country rock tends to have a high shear failure gradient (SFG) combined with a relatively low fracture gradient. Furthermore, because these reservoirs are exploited using long horizontal and multilateral wells, the drilling window is relatively narrow. For the presented case, the SFG was anticipated to be 1.39 specific gravity (SG) equivalent mud weight with an equivalent circulating density limit of 1.49 SG and stretch limit of 1.53 SG. The fluid density chosen to drill the well was 1.40 SG, and the density for the screen running fluid was planned to be 1.45 SG. Fluids Qualification Laboratory Testing Matrix. An extensive laboratory test matrix was initiated for the qualification of reservoir fluids. The reservoir fluid and drill-in fluid (RDIF) qualification is not detailed in the paper, only the LSOBCF and the novel brine used to prepare this fluid. The test matrix included tests such as rheology performance, long-term stability, production screen on 275 µm screen coupons, standard fluid-loss and filter-cake repair capabilities, reservoir fluid and RDIF compatibility tests, true crystallization temperature (TCT), and corrosion rate. The ultimate test was to check for formation and completion damage performance.



Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.



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