Comparative Study of Si-Ge-Sn Resonant Cavity Enhanced Heterojunction Bipolar Phototransistor (RCE-HPT) under Quantum Confined Stark Effect (QCSE) and Franz Keldysh Effect (FKE) at 1.55 µm
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Group Iv
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Abstract Group-IV and their alloy based Heterojunction Bipolar Phototransistors (HPTs) are of immense interest in recent day optical communication. In this paper first resonant cavity enhanced heterojunction bipolar phototransistor (RCE-HPT) with Ge0.992Sn0.008/Si0.30Ge0.61Sn0.09 Quantum Well/barrier structure under Quantum Confined Stark Effect (QCSE) has been evaluated. Further the bulk GeSn absorption region has been considered instead of QW/barrier structure and estimated the Franz Keldysh Effect (FKE). Finally different RCE-HPT related parameters such as quantum efficiency-bandwidth product, responsivity, collector current and optical gain have been studied and compared under QCSE and FKE.
2019 ◽
Vol 106
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pp. 62-67
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1997 ◽
Vol 164
(1)
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pp. 95-99
1995 ◽
Vol 142
(2)
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pp. 109-114
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2014 ◽
Vol 47
(8)
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pp. 2381-2389
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