GeSn/SiGeSn RCE photodetectors: A comparative study based on Franz-Keldysh effect and quantum confined stark effect

Author(s):  
Vedatrayee Chakraborty ◽  
Bratati Mukhopadhyay ◽  
P. K. Basu
2021 ◽  
Author(s):  
Soumava Ghosh

Abstract Group-IV and their alloy based Heterojunction Bipolar Phototransistors (HPTs) are of immense interest in recent day optical communication. In this paper first resonant cavity enhanced heterojunction bipolar phototransistor (RCE-HPT) with Ge0.992Sn0.008/Si0.30Ge0.61Sn0.09 Quantum Well/barrier structure under Quantum Confined Stark Effect (QCSE) has been evaluated. Further the bulk GeSn absorption region has been considered instead of QW/barrier structure and estimated the Franz Keldysh Effect (FKE). Finally different RCE-HPT related parameters such as quantum efficiency-bandwidth product, responsivity, collector current and optical gain have been studied and compared under QCSE and FKE.


Author(s):  
Clement Porret ◽  
Srinivasan Ashwyn Srinivasan ◽  
Sadhishkumar Balakrishnan ◽  
Peter Verheyen ◽  
Paola Favia ◽  
...  

2013 ◽  
Vol 88 (4) ◽  
Author(s):  
Marko Stölzel ◽  
Alexander Müller ◽  
Gabriele Benndorf ◽  
Matthias Brandt ◽  
Michael Lorenz ◽  
...  

1998 ◽  
Vol 184-185 ◽  
pp. 732-736 ◽  
Author(s):  
Takeshi Nagano ◽  
Ichirou Nomura ◽  
Masaru Haraguchi ◽  
Masayuki Arai ◽  
Hiroshi Hattori ◽  
...  

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