Electrical Overstress Protection of Submicron Devices.

Mapping Intimacies ◽

10.21236/ada150334 ◽

1984 ◽

Author(s):

R. J. Antinone ◽

P. A. Young

Keyword(s):

Submicron Devices ◽

Electrical Overstress

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EOS (Electrical Overstress) Protection for VLSI (Very Large Scale Integration) Devices.

10.21236/ada150333 ◽

1984 ◽

Author(s):

D. D. Wilson ◽

W. E. Echols ◽

M. G. Rossi

Keyword(s):

Large Scale ◽

Very Large Scale Integration ◽

Large Scale Integration ◽

Electrical Overstress ◽

Scale Integration

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Wiley Series in Electrostatic Discharge ( ESD ) and Electrical Overstress ( EOS )

The ESD Handbook ◽

10.1002/9781119233091.app4 ◽

2021 ◽

pp. 1055-1056

Keyword(s):

Electrostatic Discharge ◽

Electrical Overstress

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Electrical Overstress / Electrostatic Discharge Symposium Proceedings. 1998 (Cat. No.98TH8347)

Electrical Overstress/ Electrostatic Discharge Symposium Proceedings. 1998 (Cat. No.98TH8347) ◽

10.1109/eosesd.1998.737011 ◽

1998 ◽

Keyword(s):

Electrostatic Discharge ◽

Electrical Overstress

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Fabrication Techniques for Submicron Devices

Physics of Submicron Devices ◽

10.1007/978-1-4615-3284-2_2 ◽

1991 ◽

pp. 51-89

Author(s):

David K. Ferry ◽

Robert O. Grondin

Keyword(s):

Submicron Devices

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Noise in Submicron Devices

Physics of Submicron Devices ◽

10.1007/978-1-4615-3284-2_10 ◽

1991 ◽

pp. 363-396

Author(s):

David K. Ferry ◽

Robert O. Grondin

Keyword(s):

Submicron Devices

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Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) ◽

10.1109/eosesd.2000.890020 ◽

2000 ◽

Keyword(s):

Electrostatic Discharge ◽

Electrical Overstress

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Thermal failure simulation for electrical overstress in semiconductor devices

1993 IEEE International Symposium on Circuits and Systems ◽

10.1109/iscas.1993.393991 ◽

2002 ◽

Author(s):

C. Diaz ◽

C. Duvvury ◽

S.-M. Kang

Keyword(s):

Semiconductor Devices ◽

Thermal Failure ◽

Failure Simulation ◽

Electrical Overstress

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Impact ionization rate of electrons for accurate simulation of substrate current in submicron devices

Solid-State Electronics ◽

10.1016/0038-1101(93)90051-q ◽

1993 ◽

Vol 36 (10) ◽

pp. 1429-1432 ◽

Author(s):

Samar Saha ◽

Chune-Sin Yeh ◽

Bhaskar Gadepally

Keyword(s):

Impact Ionization ◽

Ionization Rate ◽

Substrate Current ◽

Submicron Devices ◽

Impact Ionization Rate

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Electrical overstress failure analysis in microcircuits

Microelectronics Reliability ◽

10.1016/0026-2714(78)90029-x ◽

1978 ◽

Vol 18 (6) ◽

pp. 476

Keyword(s):

Failure Analysis ◽

Electrical Overstress

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Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress

IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society ◽

10.1109/iecon.2018.8591088 ◽

2018 ◽

Author(s):

Evan Dimech ◽

John Frederick Dawson

Keyword(s):

Electrical Parameters ◽

Electrical Overstress

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