Impact ionization rate of electrons for accurate simulation of substrate current in submicron devices

1993 ◽  
Vol 36 (10) ◽  
pp. 1429-1432 ◽  
Author(s):  
Samar Saha ◽  
Chune-Sin Yeh ◽  
Bhaskar Gadepally
Keyword(s):  
Impact Ionization ◽  
Ionization Rate ◽  
Substrate Current ◽  
Submicron Devices ◽  
Impact Ionization Rate

Hot-Carrier Effect in Submicron pMOSFETs

1995 ◽  
Vol 391 ◽  
Author(s):  
S. Saha ◽  
C. S. Yeh ◽  
Ph. Lindorfer ◽  
J. Luo ◽  
U. Nellore ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Ionization Rate ◽  
Hot Carrier ◽  
Carrier Effect ◽  
Substrate Current ◽  
Lateral Channel ◽  
Ionization Model ◽  
Hot Carrier Effect ◽  
Impact Ionization Rate ◽  
The Impact

AbstractThis paper describes an application of process and device simulation programs in the study of substrate current generated by hot-carrier effect in submicron p-channel MOSFET devices. The impact ionization model for holes was calibrated for accurate simulation of substrate current in submicron devices, and an expression for the impact ionization rate of holes in silicon is obtained. The simulated substrate current for 0.57, 0.73 and 1.13 μm devices obtained by the optimized expression agrees very well with the measured data. The optimized impact ionization expression was also used to simulate the effect of p- Lightly Doped Drain impurity profile on substrate current, and the simulated peak substrate current and the corresponding maximum lateral channel electric field as a function of p- dose and length are presented.

Calculation of the electron and hole impact ionization rate for wurtzite AlN and GaN

2010 ◽  
Vol 25 (11) ◽  
pp. 115010 ◽  
Author(s):  
G R Li ◽  
Z X Qin ◽  
G F Luo ◽  
B Shen ◽  
G Y Zhang
Keyword(s):  
Impact Ionization ◽  
Ionization Rate ◽  
Impact Ionization Rate

Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT

2012 ◽  
Author(s):  
S. R. Pattanaik ◽  
J. Pradhan ◽  
S. K. Swain ◽  
P. Panda ◽  
G. N. Dash
Keyword(s):  
Impact Ionization ◽  
Small Variation ◽  
Ionization Rate ◽  
Rate Data ◽  
Impact Ionization Rate

Impact ionization rate near thresholds in Si

1994 ◽  
Vol 75 (10) ◽  
pp. 5102-5105 ◽  
Author(s):  
Nobuyuki Sano ◽  
Akira Yoshii
Keyword(s):  
Impact Ionization ◽  
Ionization Rate ◽  
Impact Ionization Rate
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