Measurements and Modelling of Thin Silicon Dioxide Films on Silicon

1989 ◽  
Author(s):  
A. Kalnitsky ◽  
S. P. Tay ◽  
J. P. Ellul ◽  
J. W. Andrews ◽  
E. A. Irene ◽  
...  
1971 ◽  
Vol 118 (4) ◽  
pp. 614 ◽  
Author(s):  
K. H. Beckmann ◽  
N. J. Harrick

1980 ◽  
Vol 11 (51) ◽  
Author(s):  
A. C. ADAMS ◽  
T. E. SMITH ◽  
C. C. CHANG

1999 ◽  
Vol 592 ◽  
Author(s):  
R. Rodríguez ◽  
M. Nafría ◽  
E. Miranda ◽  
J. Suñé ◽  
X. Aymerich

ABSTRACTThe degradation and breakdown of thin silicon dioxide films has been analysed using a two-step stress method. This procedure allows the evaluation of the degradation induced by the electrical stress without any assumption about the microscopic nature of the degradation process. The method has been used to analyse and compare the degradation dynamics when constant-voltage (CVS) and constant-current stresses (CCS) are applied to the oxide. Moreover, it is shown that in the case of CVS, the fitting of the I-t characteristics can provide quantitative information about the degradation (degradation rate) and breakdown (mean-time-to-breakdown), without taking into account any degradation model.


1995 ◽  
Vol 67 (7) ◽  
pp. 1031-1033 ◽  
Author(s):  
S. Zafar ◽  
K. A. Conrad ◽  
Q. Liu ◽  
E. A. Irene ◽  
G. Hames ◽  
...  

Solar Cells ◽  
1980 ◽  
Vol 1 (3) ◽  
pp. 272 ◽  
Author(s):  
T. David Burleigh ◽  
Sigurd Wagner ◽  
Theodore F. Ciszek

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