Gas Permeation Study and Imperfection Detection of Thermally Grown and Deposited Thin Silicon Dioxide Films

1962 ◽  
Vol 109 (3) ◽  
pp. 221 ◽  
Author(s):  
S. W. Ing ◽  
R. E. Morrison ◽  
J. E. Sandor
Keyword(s):  
Silicon Dioxide ◽  
Gas Permeation ◽  
Silicon Dioxide Films ◽  
Permeation Study ◽  
Thin Silicon ◽  
Thermally Grown

Measurements and Modelling of Thin Silicon Dioxide Films on Silicon

1989 ◽  
Author(s):  
A. Kalnitsky ◽  
S. P. Tay ◽  
J. P. Ellul ◽  
J. W. Andrews ◽  
E. A. Irene ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Films ◽  
Thin Silicon

Selection and characteristics of peptides that bind thermally grown silicon dioxide films

2005 ◽  
Vol 22 (5-6) ◽  
pp. 201-204 ◽  
Author(s):  
Edward Eteshola ◽  
Leonard J. Brillson ◽  
Stephen Craig Lee
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Films ◽  
Thermally Grown

Hydrides and Hydroxyls in Thin Silicon Dioxide Films

1971 ◽  
Vol 118 (4) ◽  
pp. 614 ◽  
Author(s):  
K. H. Beckmann ◽  
N. J. Harrick
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Films ◽  
Thin Silicon

ChemInform Abstract: THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS

1980 ◽  
Vol 11 (51) ◽  
Author(s):  
A. C. ADAMS ◽  
T. E. SMITH ◽  
C. C. CHANG
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Films ◽  
Thin Silicon

Evaluation of the Degradation Dynamics of Thin Silicon Dioxide Films Using Model-Independent Procedures

1999 ◽  
Vol 592 ◽  
Author(s):  
R. Rodríguez ◽  
M. Nafría ◽  
E. Miranda ◽  
J. Suñé ◽  
X. Aymerich
Keyword(s):  
Silicon Dioxide ◽  
Degradation Process ◽  
Quantitative Information ◽  
Constant Current ◽  
Degradation Model ◽  
Electrical Stress ◽  
Silicon Dioxide Films ◽  
Model Independent ◽  
Thin Silicon ◽  
Mean Time

ABSTRACTThe degradation and breakdown of thin silicon dioxide films has been analysed using a two-step stress method. This procedure allows the evaluation of the degradation induced by the electrical stress without any assumption about the microscopic nature of the degradation process. The method has been used to analyse and compare the degradation dynamics when constant-voltage (CVS) and constant-current stresses (CCS) are applied to the oxide. Moreover, it is shown that in the case of CVS, the fitting of the I-t characteristics can provide quantitative information about the degradation (degradation rate) and breakdown (mean-time-to-breakdown), without taking into account any degradation model.

Sign in / Sign up

Export Citation Format

Share Document