Influence of the Third Invariant in the Ballistic Impact of Silicon Carbide

2010 ◽  
Author(s):  
Stephen Beissel ◽  
Timothy Holmquist ◽  
Gordon Johnson
2012 ◽  
Vol 45 ◽  
pp. 52-59 ◽  
Author(s):  
Stephen R. Beissel ◽  
Timothy J. Holmquist ◽  
Gordon R. Johnson

2011 ◽  
Vol 56 (2) ◽  
pp. 503-508 ◽  
Author(s):  
R. Pęcherski ◽  
P. Szeptyński ◽  
M. Nowak

An Extension of Burzyński Hypothesis of Material Effort Accounting for the Third Invariant of Stress Tensor The aim of the paper is to propose an extension of the Burzyński hypothesis of material effort to account for the influence of the third invariant of stress tensor deviator. In the proposed formulation the contribution of the density of elastic energy of distortion in material effort is controlled by Lode angle. The resulted yield condition is analyzed and possible applications and comparison with the results known in the literature are discussed.


2020 ◽  
Vol 62 (11) ◽  
pp. 1860
Author(s):  
В.И. Веттегрень ◽  
А.Г. Кадомцев ◽  
И.П. Щербаков ◽  
Р.И. Мамалимов ◽  
В.Б. Кулик

Raman spectrum of the surface layer with a thickness of approximately 80 nm of a porous carbon ceramic was obtained (the porosity was used equal to 5%). Spectrum analysis showed that the ceramics contains crystals of silicon carbide - 6H-SiC and silicon. The destruction of ceramics by diamond microcrystals resulted in fractoluminescence (FL). Spectrum of FL contains two bands at 1.6 and 1.9 eV. The first band is formed by breaking down the silicon crystals, and the second band is formed by breaking down the 6H-SiC crystals. The time dependence of the intensity of FL signals with a time resolution of 2 ns is obtained. Three types of signals were observed: one type of signal is formed when the 6H-SiC crystals break down, the second type of signal is formed when the silicon crystals break down, and the third type of signal is formed when these crystals break down simultaneously. The appearance of signals is associated with the formation of cracks arising from the breaking down of the barriers formed at the intersection of slip planes of dislocations in silicon carbide and silicon crystals. The size of cracks in 6H-SiC is estimated: the smallest ones is 5.5 nm, and the largest is approximately 18 nm.


2011 ◽  
Vol 243-249 ◽  
pp. 2183-2187
Author(s):  
Jun Xin Liu ◽  
Zhong Fu Chen ◽  
Wei Fang Xu

For soils, failure occurs with lower deviatoric stress under the same pressure (the first invariant of stress tensor) in TXE compared with the strength of the triaxial compression, which is indicated that the strength of soils strongly depends on the third invariant of stress deviator; Although in the traditional Mohr-Coulomb criterion it can be reflected in difference of strength between triaxial extension and compression under the same pressure, it’s nothing to do with the pressure for the strength ratio between triaxial extension and compression. By TXC and TXE, changes of deviatoric stress and the ratio with the pressure were studied


1977 ◽  
Vol 99 (1) ◽  
pp. 76-79
Author(s):  
R. P. Goel

Mises type of creep equations have been used widely to study creep and relaxation phenomena. In a study by Murakami and Yamada [1] inclusion of J3, the third invariant of the deviatoric stress tensor, in the Mises type creep theories helped explain the deviations between experimental and theoretical results of a thick-walled cylinder creeping under an internal pressure. Similarly, the present study investigates the effects of including J3 in the creep constitutive equations on creep and relaxation in a circular plate with a central hole. The results show that inclusion of J3 in the creep equations tends to predict higher values of Σθ (tangential stress) in the creep problem and lower values of Σθ and Σr in the relaxation problem. Lower value of Σr in the relaxation problem implies a lower contact force at the interface of a press-fitted joint.


2003 ◽  
Vol 20 (5/6) ◽  
pp. 741-753 ◽  
Author(s):  
Peter Pivonka ◽  
Kaspar Willam

Sign in / Sign up

Export Citation Format

Share Document