scholarly journals Rosetting of Lisianthus Cultivars Exposed to High Temperature

HortScience ◽  
1992 ◽  
Vol 27 (8) ◽  
pp. 885-887 ◽  
Author(s):  
Brent K. Harbaugh ◽  
Mark S. Roh ◽  
Roger H. Lawson ◽  
Brent Pemberton
Keyword(s):  
High Temperature ◽  
Soil Temperature ◽  
Seedling Growth ◽  
Flowering Plants ◽  
Eustoma Grandiflorum ◽  
High Temperature Exposure ◽  
Seedling Age ◽  
Temperature Exposure

Three lisianthus [Eustoma grandiflorum (Raf.) Shinn.] cultivars 0, 10, 17, 24, or 31 days from sowing were grown in 28C soil for 0, 7, 14, 21, or 28 days to determine the effects of high temperature during seedling growth on the development of rosetted plants. Increasing the duration of high-temperature exposure increased the percentage of rosetted plants for all cultivars. Such exposure for 28 days resulted in 96%, 93%, and 18% rosetted plants for cultivars Yodel White, Yodel Pink, and GCREC-Blue, respectively. Seedling age did not affect percentage of flowering `Yodel Pink' plants, but as seedling age increased to 31 days, the percentage of flowering plants increased with `GCREC-Blue' and decreased for `Yodel White'. In a second experiment, four lisianthus cultivars were grown at 22C for 3 weeks and then exposed for 28 days to soil at 22, 25, 28, or 31C. Increasing soil temperature resulted in more rosetted plants for all cultivars. With soil at 31C, 83%, 58%, 19%, and 2% of the seedlings rosetted for the cultivars USDA-Pink, Yodel White, Little Belle Blue, and GCREC-Blue, respectively.

scholarly journals High-temperature Inhibition of Flowering of Phalaenopsis and Doritaenopsis Orchids

HortScience ◽  
2009 ◽  
Vol 44 (5) ◽  
pp. 1271-1276 ◽  
Author(s):  
Linsey A. Newton ◽  
Erik S. Runkle
Keyword(s):  
High Temperature ◽  
Exposure Time ◽  
Flowering Plants ◽  
Night Temperature ◽  
High Temperature Exposure ◽  
Plant Leaf ◽  
Potted Plants ◽  
Temperature Exposure

Phalaenopsis orchids require a day temperature of 26 °C or less to initiate inflorescences, whereas the night temperature has little or no effect on inflorescence initiation. We determined the duration of high temperature required each day to prevent inflorescence initiation of four Phalaenopsis and Doritaenopsis clones. In Years 1 and 2, mature potted plants were grown in separate greenhouse sections with five daily durations at 29 °C: 0, 4, 8, 12, or 24 h. The high temperature was centered in the 16-h photoperiod (0600 hr to 2200 hr) and the remainder of the day was at 20 °C. Exposure to 29 °C for 8 h or longer inhibited inflorescence initiation of Phalaenopsis Miva Smartissimo × Canberra ‘Mosella’ and Phalaenopsis Brother Pink Mask × Brother Success ‘Explosion’, but Phalaenopsis Baldan's Kaleidoscope ‘Golden Treasure’ and Doritaenopsis ‘Newberry Parfait’ required exposure to 29 °C for 12 h or longer to inhibit inflorescence initiation. Flowering was completely suppressed only when high-temperature exposure time was continual for Doritaenopsis ‘Newberry Parfait’ and Phalaenopsis Baldan's Kaleidoscope ‘Golden Treasure’ and 12 h for Phalaenopsis ‘Mosella’. Plant leaf span generally increased as duration of exposure to 29 °C increased, but high-temperature exposure had few or no significant effects on flowering characteristics of flowering plants. These studies indicate that as few as 8 h of high temperature can prevent flowering of some Phalaenopsis hybrids, whereas others require greater than 12 h of high-temperature exposure.

Creep Properties and Interfacial Microstructure of SiC Whisker Reinforced Si3N4

1989 ◽  
Vol 170 ◽  
Author(s):  
Håkan A. Swan ◽  
Colette O'meara
Keyword(s):  
High Temperature ◽  
Creep Resistance ◽  
Interfacial Microstructure ◽  
Deformation Mechanisms ◽  
Amorphous Films ◽  
Creep Tests ◽  
Creep Properties ◽  
High Temperature Exposure ◽  
Temperature Exposure

AbstractPreliminary creep tests were performed on SiC whisker reinforced and matrix Si3N4 material fabricated by the NPS technique. The material was extensively crystallised in the as received material, leaving only thin amorphous films surrounding the grains. No improvement in the creep resistance could be detected for the whisker reinforced material. The deformation mechanisms were found to be that of cavitation in the form of microcracks, predominantly at the whisker/matrix interfaces, and the formation of larger cracks. Extensive oxidation of the samples, as a result of high temperature exposure to air, was observed for the materials tested at 1375°C.

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