Virtual device model for software testing

The aim of this qualitative study was to investigate and comprehend the conditions that impact software cost, requirement tracking as well as scheduled software testing as an online administration and inspire essential exploration issues. Interviews were led with administrators from five associations. Thestudy utilized qualitative grounded hypothesis as its exploration system. The effects show that the interest for software testing and online requirement monitoring as an online administration is on the ascent and is impacted by conditions, for example, the level of area information required to adequately test a provision, adaptability and expense adequacy as profits, security and estimating as top prerequisites, cloud computing as the project monitor mode and the need for software analyzers to sharpen their abilities. Potential e x p l o r a t i o n territories recommended incorporate requisition regions best suited for online software testing, estimating and treatment of test information among others. The key issue is to monitor client’s requirements, track those requirements and also make it bug free and to avoid requirement gold plating issue. This study will present latest i d e a a b o u t online r e q u i r e m e n t monitoring and software testing.

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Implications of Software Testing Strategies at Initial Level of CMMI An Analysis

International Journal of Computer Sciences and Engineering ◽

10.26438/ijcse/v6i5.10551061 ◽

2018 ◽

Vol 6 (5) ◽

pp. 1055-1061

Author(s):

R. Sharma ◽

◽

R. Dadhich

Keyword(s):

Software Testing ◽

Initial Level ◽

Testing Strategies

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Consistent Device Model of a Perovskite Solar Cell for Multiple Experiments

10.29363/nanoge.ngfm.2019.107 ◽

2019 ◽

Author(s):

Evelyne Knapp ◽

Andreas Schiller ◽

Martin T. Neukom ◽

Simon Züfle ◽

Beat Ruhstaller

Keyword(s):

Solar Cell ◽

Perovskite Solar Cell ◽

Device Model

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Failure Analysis of CDM-ESD Damage in a GaAs RFIC

ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2000p0215 ◽

2000 ◽

Author(s):

Amy Poe ◽

Steve Brockett ◽

Tony Rubalcava

Keyword(s):

Radio Frequency ◽

Failure Analysis ◽

Integrated Circuit ◽

Production Test ◽

Analysis Techniques ◽

Device Model ◽

Charged Device ◽

Subsequent Failure

Abstract The intent of this work is to demonstrate the importance of charged device model (CDM) ESD testing and characterization by presenting a case study of a situation in which CDM testing proved invaluable in establishing the reliability of a GaAs radio frequency integrated circuit (RFIC). The problem originated when a sample of passing devices was retested to the final production test. Nine of the 200 sampled devices failed the retest, thus placing the reliability of all of the devices in question. The subsequent failure analysis indicated that the devices failed due to a short on one of two capacitors, bringing into question the reliability of the dielectric. Previous ESD characterization of the part had shown that a certain resistor was likely to fail at thresholds well below the level at which any capacitors were damaged. This paper will discuss the failure analysis techniques which were used and the testing performed to verify the failures were actually due to ESD, and not caused by weak capacitors.

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Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause

ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2014p0205 ◽

2014 ◽

Author(s):

Yuk L. Tsang ◽

Alex VanVianen ◽

Xiang D. Wang ◽

N. David Theodore

Keyword(s):

Threshold Voltage ◽

Crystalline Silicon ◽

Electrical Characterization ◽

Visual Defect ◽

Scanning Capacitance Microscopy ◽

Device Model ◽

Graphical Simulation ◽

Cmos Transistor

Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.

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