Effect of alkalinity on sulfur concentration at sulfide saturation in hydrous basaltic andesite to shoshonite melts at 1270 °C and 1 GPa

AbstractWe have made a series of a-SiSx:H based solar cells, with a pin structure, in a multichamber plasma enhanced chemical vapor deposition (PECVD) system. The sulfur concentration ranges from zero to 5 x 1018 cm-3 as measured by secondary ion mass spectroscopy. The initial conversion efficiencies of cells in this series with sulfur concentrations ≤ 1018 cm-3 are approximately 7%. The time constants for degradation increase with increasing sulfur concentration, but not fast enough to be of practical importance in photovoltaic devices.

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T-P-fO2 conditions of sulfide saturation in magmatic enclaves and their host lavas

Lithos ◽

10.1016/j.lithos.2021.106313 ◽

2021 ◽

pp. 106313

Author(s):

Ariadni Georgatou ◽

Massimo Chiaradia ◽

Kalin Kouzmanov

Keyword(s):

Sulfide Saturation ◽

Magmatic Enclaves

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Clast shape and textural associations in peperite as a guide to hydromagmatic interactions: Upper Permian basaltic and basaltic andesite examples from Kiama, Australia

Australian Journal of Earth Sciences ◽

10.1046/j.1440-0952.2000.00773.x ◽

2000 ◽

Vol 47 (1) ◽

pp. 167-177 ◽

Cited By ~ 51

Author(s):

M. G. Doyle

Keyword(s):

Basaltic Andesite ◽

Upper Permian

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Mantle source and magma oxygen fugacity of Permian Ni Cu sulfide-bearing mafic-ultramafic intrusions in the Inner Mongolia, North China: Controls on the sulfide saturation of magmas in the Andean-style continental convergent margins

Lithos ◽

10.1016/j.lithos.2021.106105 ◽

2021 ◽

pp. 106105

Author(s):

Yonghua Cao ◽

Christina Yan Wang ◽

Bo Wei ◽

Hongtian Bao

Keyword(s):

Oxygen Fugacity ◽

Mantle Source ◽

Inner Mongolia ◽

North China ◽

Convergent Margins ◽

Sulfide Saturation

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Electronic and Optical Properties of a-Si:H Films Alloyed with Sulfur

MRS Proceedings ◽

10.1557/proc-336-559 ◽

1994 ◽

Vol 336 ◽

Cited By ~ 11

Author(s):

S.L. Wang ◽

Z.H. Lin ◽

J.M. Viner ◽

P.C. Taylor

Keyword(s):

Optical Properties ◽

Fermi Level ◽

Activation Energies ◽

Significant Enhancement ◽

Sulfur Concentration ◽

Electronic And Optical Properties ◽

Staebler Wronski Effect ◽

Optically Induced

ABSTRACTAlloying a-Si:H with small amounts of sulfur (≤ 4 × 1020 cm−3) results in a significant enhancement in the photoconductivity and a suppression of the optically-induced degradation of the photoconductivity (Staebler-Wronski effect). The Magnitudes of the activation energies for conductivity imply that these films remain essentially intrinsic in nature. When the sulfur concentration is increased to about 2 to 3 at. %, the Fermi level rises by about 0.25 eV, a fact that suggests that sulfur may act as a very inefficient dopant in a-Si:H.

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