Analysis of Passive Infrared Detector for Target Detection in an Iot Based Outdoor Environment

2020 ◽  
Author(s):  
Nilima Zade ◽  
Shubhada Deshpande ◽  
Dr. Devulapalli Sita
1987 ◽  
Vol 75 (1) ◽  
pp. 345-354 ◽  
Author(s):  
Hans Meixner

2019 ◽  
Vol 35 (4) ◽  
pp. 481-493 ◽  
Author(s):  
Y. Cai ◽  
Li Ma ◽  
Gang Liu

Abstract. The amount of daily activity can be used as important data for the analysis and evaluation of the health, diseases, and environmental conditions of hog farms, which in turn can affect fertility rate and productivity. In this article, a monitoring system based on a passive infrared detector (PID) is proposed to analyze daily hog activity and abnormal behaviors. The hardware includes a high-accuracy acquisition system, which uses a 24-bit ADS1256 chip as its A/D conversion and signal input channel, and a PID, which ensures that the signal can be obtained uninterruptedly day and night. Based on the LabVIEW software platform, a real-time data acquisition, display, and storage system was programmed in which the activity curve can be displayed, and the system parameters can be modified if necessary. A simulation experiment was performed in a test laboratory (7 × 17 m) with a larger size than a typical hog room (7 × 15 m), and the appropriate orientation of the sensor, the installed position, and the lens were selected. Data for 90 days (day and night) were collected in a hog room to establish the model of daily activity. To find the abnormal behaviors during the night, an improved K-means clustering was constructed. The results indicated that the improved K-means clustering method performed satisfactorily in clustering and anomaly detection. The developed system for daily activities monitoring and night-time anomaly detection could be a potential technique to assist research in hog behavior detection and animal welfare improvement. Keywords: Animal activity, Hog, Motion sensor, PID, Signal processing.


2016 ◽  
Vol 55 (11) ◽  
pp. 2881 ◽  
Author(s):  
Nicolas Vannier ◽  
François Goudail ◽  
Corentin Plassart ◽  
Matthieu Boffety ◽  
Patrick Feneyrou ◽  
...  

2018 ◽  
Vol 214 ◽  
pp. 219-224 ◽  
Author(s):  
R. Besteiro ◽  
M.R. Rodríguez ◽  
M.D. Fernández ◽  
J.A. Ortega ◽  
R. Velo

Author(s):  
M. E. Twigg ◽  
B. R. Bennett ◽  
J. R. Waterman ◽  
J. L. Davis ◽  
B. V. Shanabrook ◽  
...  

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.


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