scholarly journals Development of White Light Emitting Diodes by Multi-layered Red, Green, and Blue Phosphors Excited by Near-ultraviolet Light Emitting Diodes

2008 ◽  
Vol 32 (1) ◽  
pp. 43-45 ◽  
Author(s):  
Takeshi FUKUI ◽  
Hiroaki SAKUTA ◽  
Kazuya MISHIRO ◽  
Tsutomu MIYACHI ◽  
Kunihito KAMON ◽  
...  
Optik ◽  
2021 ◽  
Vol 240 ◽  
pp. 166908
Author(s):  
Qifeng Tang ◽  
Tao Yang ◽  
Haifeng Huang ◽  
Jinqing Ao ◽  
Biyou Peng ◽  
...  

2019 ◽  
Vol 7 (35) ◽  
pp. 10802-10809 ◽  
Author(s):  
Peng Du ◽  
Weiguang Ran ◽  
Weiping Li ◽  
Laihui Luo ◽  
Xiaoyong Huang

A series of NaTbF4 and Eu3+-activated NaTbF4 nanorods with high luminescent efficiency were designed by using an ingenious reaction technique at room temperature.


2003 ◽  
Vol 83 (24) ◽  
pp. 4906-4908 ◽  
Author(s):  
Satoshi Watanabe ◽  
Norihide Yamada ◽  
Masakazu Nagashima ◽  
Yusuke Ueki ◽  
Chiharu Sasaki ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 3170-3178 ◽  
Author(s):  
Peng Du ◽  
Yue Guo ◽  
Soo Hyun Lee ◽  
Jae Su Yu

A series of Eu3+-activated Gd2MoO6 phosphors were synthesized via a citric acid-assisted sol–gel route.


2019 ◽  
Vol 9 (5) ◽  
pp. 871 ◽  
Author(s):  
Abu Islam ◽  
Dong-Soo Shim ◽  
Jong-In Shim

We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different indium compositions. Various macroscopic characterizations have been performed to show that the strain-induced piezoelectric field (FPZ), the crystal quality, and the internal quantum efficiency increase with the sample’s indium composition. This improved performance is owing to the carrier recombination at relatively defect-free indium-rich localized sites, caused by the local in-plane potential-energy fluctuation in MQWs. The potential-energy fluctuation in MQWs are considered to be originating from the combined effects of the inhomogeneous distribution of point defects, FPZ, and indium compositions.


2011 ◽  
Vol 14 (11) ◽  
pp. H438 ◽  
Author(s):  
Shuangyu Xin ◽  
Yuhua Wang ◽  
Zhaofeng Wang ◽  
Feng Zhang ◽  
Yan Wen ◽  
...  

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