scholarly journals Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995

1995 ◽  
Author(s):  
G.F. Knoll
Keyword(s):  
Gallium Arsenide ◽  
Semiconductor Detector ◽  
Room Temperature ◽  
Gamma Ray ◽  
Progress Report ◽  
Gamma Ray Detector

Improved Spectrometer Performance of Cadmium Selenide Room Temperature Gamma-Ray Detector

1986 ◽  
Vol 33 (1) ◽  
pp. 407-410 ◽  
Author(s):  
M. Roth ◽  
A. Burger
Keyword(s):  
Cadmium Selenide ◽  
Room Temperature ◽  
Gamma Ray ◽  
Gamma Ray Detector

CeBr3 as a room-temperature, high-resolution gamma-ray detector

2009 ◽  
Vol 608 (2) ◽  
pp. 297-304 ◽  
Author(s):  
Paul Guss ◽  
Michael Reed ◽  
Ding Yuan ◽  
Alexis Reed ◽  
Sanjoy Mukhopadhyay
Keyword(s):  
High Resolution ◽  
Room Temperature ◽  
Gamma Ray ◽  
Gamma Ray Detector ◽  
High Resolution Gamma

Characterization of a VPE gallium arsenide x-gamma-ray detector

1998 ◽  
Author(s):  
Giuseppe Bertuccio ◽  
D. Maiocchi ◽  
C. Rente ◽  
Arno Foerster ◽  
Hans Luth
Keyword(s):  
Gallium Arsenide ◽  
Gamma Ray ◽  
Gamma Ray Detector

The Sputter Deposition and Characterisation of High Quality Single Crystal Mo Thin Films

1990 ◽  
Vol 202 ◽  
Author(s):  
R. E. Somekh ◽  
D. Van Vechten ◽  
M. G. Blamire ◽  
D. M. Tricker ◽  
Z. H. Barber ◽  
...  
Keyword(s):  
Room Temperature ◽  
Gamma Ray ◽  
Xrd Analysis ◽  
Sputter Deposition ◽  
Superconducting Transition ◽  
Conductivity Measurements ◽  
High Quality ◽  
Temperature Resistance ◽  
Sapphire Substrates ◽  
Gamma Ray Detector

ABSTRACTWe report on the epitaxial growth of superconducting molybdenum films on sapphire substrates. These films are to be etched into arrays of isolated cylinders, each 1–5μm in diameter. When placed in a magnetic field and biased at 0.95 Tc(H), the flux movement associated with their bolometric response to the energy deposited when radiation is absorbed will provide the basis of a gamma-ray detector.The films were prepared by UHV sputter deposition at temperatures between 650° and 840°C. Besides standard XRD analysis the films were examined by TEM. An epitaxy orientation relationship with sapphire was found similar to that observed for niobium. Electrical conductivity measurements were made as a function of temperature down to Tc, the superconducting transition temperature, which ranged from below 0.35K to above 0.8K for films with a high room temperature resistance ratio (e.g. 300 in a 0.9pjn thick film). Results from a range of films will be presented and their Tc’s discussed.

A silicon x- and gamma-ray detector for room temperature and low voltage operation

1982 ◽  
Vol 193 (1-2) ◽  
pp. 63-67 ◽  
Author(s):  
Massaya Yabe ◽  
Noritada Sato ◽  
Hiroshi Kamijo ◽  
Toshiaki Takechi ◽  
Fumio Shiraishi
Keyword(s):  
Room Temperature ◽  
Gamma Ray ◽  
Low Voltage ◽  
Low Voltage Operation ◽  
Gamma Ray Detector

scholarly journals Gamma Ray Detector Using Gallium Arsenide to Develop an Electrode Detector

10.2172/4858 ◽  
1999 ◽  
Author(s):  
G.F. Knoll
Keyword(s):  
Gallium Arsenide ◽  
Gamma Ray ◽  
Gamma Ray Detector

scholarly journals CdZnTe room-temperature semiconductor gamma-ray detector for national-security applications

2007 ◽  
Author(s):  
G. S. Camarda ◽  
A. E. Bolotnikov ◽  
Y. Cui ◽  
A. Hossain ◽  
K. T. Kohman ◽  
...  
Keyword(s):  
National Security ◽  
Room Temperature ◽  
Gamma Ray ◽  
Security Applications ◽  
Gamma Ray Detector ◽  
Semiconductor Gamma

Gamma-ray imaging and spectroscopy system using room-temperature semiconductor detector elements

1998 ◽  
Vol 233 (1-2) ◽  
pp. 177-184
Author(s):  
J. C. Lund ◽  
N. R. Hilton ◽  
J. E. McKisson ◽  
J. M. Van Scyoc ◽  
B. A. Brunett ◽  
...  
Keyword(s):  
Semiconductor Detector ◽  
Room Temperature ◽  
Gamma Ray ◽  
Gamma Ray Imaging ◽  
Spectroscopy System ◽  
Imaging And Spectroscopy
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