scholarly journals Addendum to a Proposal for Atlas: A Precision Heavy-Ion Accelerator at Argonne National Laboratory

1978 ◽  
Author(s):  
Not Given Author
1988 ◽  
Vol 100 ◽  
Author(s):  
M. W. Bench ◽  
I. M. Robertson ◽  
M. A. Kirk

ABSTRACTTransmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEN - Ion Accelerator Facility at Argonne National Laboratory. The ion bcorbardments (50 keV Ar+ and Kr+) and the microscopy have been carried out at temperatures rangrin from 30 to 300 K. Ion fluences ranged from 2 × 1011 to 5 × 1013 ions cm−2.Direct-inpact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30 K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250 K. Post implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears.


Author(s):  
M. W. Bench ◽  
I. M. Robertson ◽  
M. A. Kirk

Transmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments were undertaken to provide additional insight into the mechanisms by which individual amorphous zones and eventually amorphous layers are created. To understand these mechanisms, the structure of the defects created as a function of material, irradiating ion, dose, dose rate, and implantation tenperature have been studied using TEM. Also, the recovery of the crystalline structure by annealing has been investigated.These experiments were performed at the High-Voltage Electron Microscope - Ion Accelerator Facility at Argonne National Laboratory. This facility consists of an HVEM which has been interfaced with two ion accelerators. This coupling, plus the availability of several specimen stages permits ion irradiations to be performed in the specimen chamber of the microscope at controlled temperatures from 10 to 1000 K.


Author(s):  
Charles W. Allen ◽  
Robert C. Birtcher

The uranium silicides, including U3Si, are under study as candidate low enrichment nuclear fuels. Ion beam simulations of the in-reactor behavior of such materials are performed because a similar damage structure can be produced in hours by energetic heavy ions which requires years in actual reactor tests. This contribution treats one aspect of the microstructural behavior of U3Si under high energy electron irradiation and low dose energetic heavy ion irradiation and is based on in situ experiments, performed at the HVEM-Tandem User Facility at Argonne National Laboratory. This Facility interfaces a 2 MV Tandem ion accelerator and a 0.6 MV ion implanter to a 1.2 MeV AEI high voltage electron microscope, which allows a wide variety of in situ ion beam experiments to be performed with simultaneous irradiation and electron microscopy or diffraction.At elevated temperatures, U3Si exhibits the ordered AuCu3 structure. On cooling below 1058 K, the intermetallic transforms, evidently martensitically, to a body-centered tetragonal structure (alternatively, the structure may be described as face-centered tetragonal, which would be fcc except for a 1 pet tetragonal distortion). Mechanical twinning accompanies the transformation; however, diferences between electron diffraction patterns from twinned and non-twinned martensite plates could not be distinguished.


Author(s):  
R W Barnfield ◽  
B W Farmery ◽  
L C W Hobbis ◽  
R S Nelson ◽  
M W Thompson

2008 ◽  
Vol 5 (7) ◽  
pp. 582-585 ◽  
Author(s):  
M. M. Basko ◽  
A. A. Drozdovskii ◽  
A. A. Golubev ◽  
K. L. Gubskii ◽  
D. D. Iosseliani ◽  
...  

1975 ◽  
Vol 22 (3) ◽  
pp. 1643-1646 ◽  
Author(s):  
W. Busse ◽  
B. Efken ◽  
D. Hilscher ◽  
H. Homeyer ◽  
H. Lettau ◽  
...  

2004 ◽  
Vol 41 (sup4) ◽  
pp. 164-167
Author(s):  
Hiroshi Yamakawa ◽  
Koji Oishi ◽  
Yoshitomo Uwamino ◽  
Kazuaki Kosako ◽  
Hiroshi Yashima ◽  
...  

2016 ◽  
Vol 66 (12) ◽  
pp. 1491-1499
Author(s):  
Jongwon KIM* ◽  
Woo-kang KIM ◽  
Hyun-man JANG ◽  
Youngkwon KIM ◽  
Ilkyoung SHIN ◽  
...  

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