scholarly journals Apollo(R) Thin Film Process Development: Final Technical Report, April 1998 - April 2002

2002 ◽  
Author(s):  
D.W. Cunningham
Keyword(s):  
Thin Film ◽  
Process Development ◽  
Technical Report

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

Design and development of an in-line sputtering system and process development of thin film multilayer neutron supermirrors

2014 ◽  
Vol 85 (12) ◽  
pp. 123103 ◽  
Author(s):  
A. Biswas ◽  
R. Sampathkumar ◽  
Ajaya Kumar ◽  
D. Bhattacharyya ◽  
N. K. Sahoo ◽  
...  
Keyword(s):  
Thin Film ◽  
Process Development ◽  
Design And Development ◽  
Sputtering System

Manufacturing Process Development for Thin Film Filaments as a New Product

2020 ◽  
pp. 513-522
Author(s):  
Bahadır Tunaboylu ◽  
Biset Toprak ◽  
Ahmet Korhan Binark ◽  
Osman Öztürk ◽  
Selim Zaim
Keyword(s):  
Thin Film ◽  
Manufacturing Process ◽  
Process Development ◽  
New Product
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