scholarly journals Measurement of the Auger Recombination Rate in p-type 0.54-eV GaInAsSb by Time-Resolved Photoluminescence

2003 ◽  
Author(s):  
S. Anikeev ◽  
D. Donetsky ◽  
G. Belenky ◽  
S. Luryi ◽  
C.A. Wang ◽  
...  
Keyword(s):  
Recombination Rate ◽  
Auger Recombination ◽  
Time Resolved ◽  
P Type ◽  
Time Resolved Photoluminescence ◽  
Auger Recombination Rate

scholarly journals Measurement of the Auger recombination rate in p-type 0.54 eV GaInAsSb by time-resolved photoluminescence

2003 ◽  
Vol 83 (16) ◽  
pp. 3317-3319 ◽  
Author(s):  
S. Anikeev ◽  
D. Donetsky ◽  
G. Belenky ◽  
S. Luryi ◽  
C. A. Wang ◽  
...  
Keyword(s):  
Recombination Rate ◽  
Auger Recombination ◽  
Time Resolved ◽  
P Type ◽  
Time Resolved Photoluminescence ◽  
Auger Recombination Rate

scholarly journals Auger recombination rate in quantum well lasers

1985 ◽  
Vol 7 (2) ◽  
pp. 149-154
Author(s):  
P K Basu
Keyword(s):  
Quantum Well ◽  
Recombination Rate ◽  
Auger Recombination ◽  
Quantum Well Lasers ◽  
Auger Recombination Rate

Imagings of Picosecond-Photoexcited Carriers and Enhanced Auger Recombination Rate by Transient Reflecting Grating Measurements

1996 ◽  
Vol 35 (Part 1, No. 6A) ◽  
pp. 3642-3647 ◽  
Author(s):  
Takayuki Tanaka ◽  
Akira Harata ◽  
Tsuguo Sawada
Keyword(s):  
Recombination Rate ◽  
Auger Recombination ◽  
Auger Recombination Rate

Auger recombination rate in InGaAsP lasers

1982 ◽  
Vol 18 (19) ◽  
pp. 806 ◽  
Author(s):  
M.G. Burt
Keyword(s):  
Recombination Rate ◽  
Auger Recombination ◽  
Auger Recombination Rate

scholarly journals On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation

2001 ◽  
Vol 6 ◽  
Author(s):  
F. Shahedipour ◽  
B.W. Wessels
Keyword(s):  
Luminescence Intensity ◽  
Random Distribution ◽  
Blue Emission ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Shallow Acceptors ◽  
Donor Acceptor Pair ◽  
P Type ◽  
Time Resolved Photoluminescence

The decay dynamics of the 2.8 eV emission band in p-type GaN was investigated using time-resolved photoluminescence spectroscopy. The luminescence intensity decays non-exponentially. The decay dynamics were consistent with donor-acceptor pair recombination for a random distribution of pair distances. Calculations using the Thomas-Hopfield model indicated that recombination involves deep donors and shallow acceptors.

scholarly journals Nonmonotonic Dependence of Auger Recombination Rate on Shell Thickness for CdSe/CdS Core/Shell Nanoplatelets

Nano Letters ◽  
2017 ◽  
Vol 17 (11) ◽  
pp. 6900-6906 ◽  
Author(s):  
Matthew Pelton ◽  
Jordan J. Andrews ◽  
Igor Fedin ◽  
Dmitri V. Talapin ◽  
Haixu Leng ◽  
...  
Keyword(s):  
Recombination Rate ◽  
Shell Thickness ◽  
Auger Recombination ◽  
Core Shell ◽  
Nonmonotonic Dependence ◽  
Auger Recombination Rate

Time-Resolved Photoluminescence from nm-Sized Silicon Crystallites In SiO2

1997 ◽  
Vol 486 ◽  
Author(s):  
J. Linnros ◽  
A. Galeckas ◽  
A. Pareaud ◽  
N. Lalic ◽  
V. Grivickas ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Large Time ◽  
Auger Recombination ◽  
Dose Dependence ◽  
Nucleation And Growth ◽  
Time Resolved ◽  
Annealing Temperatures ◽  
Si Nanocrystals ◽  
Time Resolved Photoluminescence ◽  
Nucleation And Growth Mechanism

AbstractTime resolved photoluminescence (PL) decays have been measured for Si nanocrystals embedded in silicon dioxide. The nanocrystals were formed by Si implantation followed by thermal annealing at 800 – 1200 °C. The observed PL peaked in the wavelength range 640 – 850 nm and the PL decay exhibited a stretched exponential lineshape, characterized by a relatively large time constant. A nonlinear dose dependence of the PL yield and an observed redshifting for increasing doses and/or higher annealing temperatures is discussed in terms of a nucleation and growth mechanism for the nanocrystals. Finally, we argue that Auger recombination is effective at high excitation densities explaining a wavelength dependent saturation of the PL intensity.

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