scholarly journals On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation

2001 ◽  
Vol 6 ◽  
Author(s):  
F. Shahedipour ◽  
B.W. Wessels
Keyword(s):  
Luminescence Intensity ◽  
Random Distribution ◽  
Blue Emission ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Shallow Acceptors ◽  
Donor Acceptor Pair ◽  
P Type ◽  
Time Resolved Photoluminescence

The decay dynamics of the 2.8 eV emission band in p-type GaN was investigated using time-resolved photoluminescence spectroscopy. The luminescence intensity decays non-exponentially. The decay dynamics were consistent with donor-acceptor pair recombination for a random distribution of pair distances. Calculations using the Thomas-Hopfield model indicated that recombination involves deep donors and shallow acceptors.

scholarly journals Time Resolved Photoluminescence of Cubic Mg Doped GaN

1999 ◽  
Vol 572 ◽  
Author(s):  
R. Seitz ◽  
C. Gaspar ◽  
T. Monteiro ◽  
E. Pereira ◽  
B. Schoettker ◽  
...  
Keyword(s):  
Blue Emission ◽  
Spectral Shift ◽  
Excitation Density ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Deep Donor ◽  
Cubic Gan ◽  
Donor Acceptor ◽  
Time Resolved Photoluminescence ◽  
Mg Doped

ABSTRACTMg doped cubic GaN layers were studied by steady state and time resolved photoluminescence. The blue emission due to Mg doping can be decomposed in three bands. The decay curves and the spectral shift with time delays indicates donor-acceptor pair behaviour. This can be confirmed by excitation density dependent measurements. Furthermore temperature dependent analysis shows that the three emissions have one impurity in common. We propose that this is an acceptor level related to the Mg incorporation and the three deep donor levels are due to compensation effects.

Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers

1995 ◽  
Vol 378 ◽  
Author(s):  
B. K. Meyer ◽  
D. Volm ◽  
C. Wetzel ◽  
L. Eckey ◽  
J.-Ch. Holst ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Photoluminescence Spectroscopy ◽  
Epitaxial Layers ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Sapphire Substrates ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Time Resolved Photoluminescence

AbstractFree and bound exciton luminescences as well as donor-acceptor pair recombination of GaN epitaxial layers on 6H-SiC and sapphire substrates were investigated using time integrated and time resolved photoluminescence measurements at low temperatures. Lifetimes are determined for the donor bound exciton at 3.4722eV and for two acceptor bound excitons with energies of 3.4672eV and 3.459eV. Luminescences between 3.29eV and 3.37eV are identified as due to excitons deeply bound to centers located near the substrate-epilayer interface.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

p-type conductivity and donor-acceptor pair emission in Cd1−xFexS dilute magnetic semiconductors

2006 ◽  
Vol 89 (26) ◽  
pp. 262118 ◽  
Author(s):  
X. J. Wu ◽  
D. Z. Shen ◽  
Z. Z. Zhang ◽  
J. Y. Zhang ◽  
K. W. Liu ◽  
...  
Keyword(s):  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Acceptor Pair ◽  
Type Conductivity ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type

scholarly journals Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride

1999 ◽  
Vol 4 (S1) ◽  
pp. 526-531 ◽  
Author(s):  
U. Birkle ◽  
M. Fehrer ◽  
V. Kirchner ◽  
S. Einfeldt ◽  
D. Hommel ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Atomic Layer ◽  
Typical Feature ◽  
Acceptor Pair ◽  
Carbon Doped ◽  
Order Of Magnitude ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type ◽  
Carbon Concentrations

GaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm−3 to 1020 cm−3. The incorporation of carbon leads to a reduction of the background electron concentration by one order of magnitude but the material remains n-type. For high carbon concentrations a re-increase of the carrier concentration is observed which is related to selfcompensation. Investigations of the donor-acceptor-pair luminescence show that doping with carbon is accompanied by the generation of a new donor exhibiting a thermal activation energy of about 55 meV. Layers grown by atomic layer epitaxy are marked by an increased intensity of the donor-acceptor-pair band luminescence which is attributed to the enforced incorporation of carbon onto the nitrogen sublattice. The yellow luminescence is found to be a typical feature of all carbon doped layers in contrast to nominally undoped samples.

Donor–acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy

2007 ◽  
Vol 122-123 ◽  
pp. 368-370 ◽  
Author(s):  
S.J. Jiao ◽  
Y.M. Lu ◽  
D.Z. Shen ◽  
Z.Z. Zhang ◽  
B.H. Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Doping ◽  
Molecular Beam ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type

Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride

1998 ◽  
Vol 537 ◽  
Author(s):  
U. Birkle ◽  
M. Fehrer ◽  
V. Kirchner ◽  
S. Einfeldt ◽  
D. Hommel ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Atomic Layer ◽  
Typical Feature ◽  
Acceptor Pair ◽  
Carbon Doped ◽  
Order Of Magnitude ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type ◽  
Carbon Concentrations

AbstractGaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm-1 to 10 20 cm-1. The incorporation of carbon leads to a reduction of the background electron concentration by one order of magnitude but the material remains n-type. For high carbon concentrations a re-increase of the carrier concentration is observed which is related to selfcompensation. Investigations of the donor-acceptor-pair luminescence show that doping with carbon is accompanied by the generation of a new donor exhibiting a thermal activation energy of about 55 meV. Layers grown by atomic layer epitaxy are marked by an increased intensity of the donor-acceptor-pair band luminescence which is attributed to the enforced incorporation of carbon onto the nitrogen sublattice. The yellow luminescence is found to be a typical feature of all carbon doped layers in contrast to nominally undoped samples.

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