Multiple Quantum Barrier Nano-avalanche Photodiodes - Part II: Excess Noise Characteristics

2019 ◽  
Vol 9 (2) ◽  
pp. 185-191
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya
Keyword(s):  
Avalanche Photodiodes ◽  
Noise Factor ◽  
Excess Noise ◽  
Multiple Quantum ◽  
Noise Performance ◽  
Excess Noise Factor ◽  
Simulation Methodology ◽  
Noise Characteristics ◽  
Good Agreement ◽  
Ionization Rates

Background: Excess noise characteristics of Multiple Quantum Barrier (MQB) nanoscale avalanche photodiodes (APDs) based on Si~3C-SiC heterostructures have been studied in this part of the paper. The multiplication gain and Excess Noise Factor (ENF) of the MQB APDs have been calculated by varying the number of Quantum Barriers (QBs). Methods: The numerically calculated ENF values of MQB APDs have been compared with the ENF of Si flat conventional APDs of similar dimensions and it is observed that the use of QBs leads to significant reduction in ENF of the APDs under similar biasing and illumination conditions. Results: The enhanced ratio of hole to electron ionization rates in MQB structures as compared to the bulk Si APD structure has been found to be the primary cause of improvement in the noise performance of the MQB nano-APDs. Conclusion: Finally, the numerically calculated ENF of Si flat APD has been compared with the experimentally measured ENF of a commercially available Si APD and those are found to be in good agreement; this comparison validates the simulation methodology adopted by the authors in this paper.

scholarly journals Excess Noise Factor in Avalanche Photodiodes with Dead Space Effect

2021 ◽  
Author(s):  
Vignesh Reddy Angadi
Keyword(s):  
Monte Carlo ◽  
User Interface ◽  
Graphical User Interface ◽  
Avalanche Photodiodes ◽  
Research Work ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor ◽  
Monte Carlo Calculations ◽  
Space Effect

Abstract This project aims to produce a graphical user interface (GUI) for MATLAB programs written by J.S.Marsland as part of his research into the excess noise factor in avalanche photodiodes (APDs). The GUI will be produced using the GUIDE package supplied with the MATLAB software combined with the MATLAB programs. The GUI will then be used to compare this research work with the research work of others e.g. the Monte Carlo calculations made by the research group at the French Aerospace Laboratory (ONERA). Comparison with other research work will require the digitization of some graphs published in academic journals.

Mean multiplication gain and excess noise factor of GaN and Al0.45Ga0.55N avalanche photodiodes

2020 ◽  
Vol 92 (1) ◽  
pp. 10301
Author(s):  
Tat Lung Wesley Ooi ◽  
Pei Ling Cheang ◽  
Ah Heng You ◽  
Yee Kit Chan
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Monte Carlo Model ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor ◽  
Multiplication Gain ◽  
Ionization Coefficients ◽  
The Impact

In this work, Monte Carlo model is developed to investigate the avalanche characteristics of GaN and Al0.45Ga0.55N avalanche photodiodes (APDs) using random ionization path lengths incorporating dead space effect. The simulation includes the impact ionization coefficients, multiplication gain and excess noise factor for electron- and hole-initiated multiplication with a range of thin multiplication widths. The impact ionization coefficient for GaN is higher than that of Al0.45Ga0.55N. For GaN, electron dominates the impact ionization at high electric field while hole dominate at low electric field whereas Al0.45Ga0.55N has hole dominate the impact ionization at higher field while electron dominate the lower field. In GaN APDs, electron-initiated multiplication is leading the multiplication gain at thinner multiplication widths while hole-initiated multiplication leads for longer widths. However for Al0.45Ga0.55N APDs, hole-initiated multiplication leads the multiplication gain for all multiplication widths simulated. The excess noise of electron-initiated multiplication in GaN APDs increases as multiplication widths increases while the excess noise decreases as the multiplication widths increases for hole-initiated multiplication. As for Al0.45Ga0.55N APDs, the excess noise for hole-initiated multiplication increases when multiplication width increases while the electron-initiated multiplication increases with the same gradient at all multiplication widths.

Study of Excess Noise Factor Under Nonlocal Effect in Avalanche Photodiodes

2014 ◽  
Vol 26 (21) ◽  
pp. 2150-2153 ◽  
Author(s):  
Wenlu Sun ◽  
Xiaoguang Zheng ◽  
Joe C. Campbell
Keyword(s):  
Avalanche Photodiodes ◽  
Noise Factor ◽  
Excess Noise ◽  
Nonlocal Effect ◽  
Excess Noise Factor
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