A Recent Patent on Microwave Plasma Chemical Vapor-Deposited Diamond Film on Cutting Tools

Author(s):  
Zhang Ling ◽  
Kong Dejun
1995 ◽  
Vol 10 (1) ◽  
pp. 158-164 ◽  
Author(s):  
Hideaki Maeda ◽  
Miki Irie ◽  
Takafumi Hino ◽  
Katsuki Kusakabe ◽  
Shigeharu Morooka

Highly oriented diamond film was grown on a (100) Si substrate by a bias-enhanced microwave-plasma chemical vapor deposition. The Si surface was carburized at a faster rate by bias treatment than by carburization alone, but the initial carburization stage was indispensable. During the bias treatment, the flat surface was changed to a textured structure on the nanometer scale. The formation of this structure was required for the synthesis of a highly oriented diamond film. Diamond microcrystals formed subsequently were irregular and of a few to a few tens nanometers in size. They then grew to oriented film in the following growth process.


1997 ◽  
Vol 71 (19) ◽  
pp. 2848-2850 ◽  
Author(s):  
Sacharia Albin ◽  
Jianli Zheng ◽  
John B. Cooper ◽  
Weihai Fu ◽  
Arnel C. Lavarias

2004 ◽  
Vol 13 (4-8) ◽  
pp. 595-599 ◽  
Author(s):  
J.M. Garguilo ◽  
B.A. Davis ◽  
M. Buddie ◽  
F.A.M. Köck ◽  
R.J. Nemanich

1997 ◽  
Vol 3 (3) ◽  
pp. 129-135 ◽  
Author(s):  
M. Shahidul Haque ◽  
Hameed A. Naseem ◽  
Ajay P. Malshe ◽  
William D. Brown

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