The formation of a (111) texture of the diamond film on Pt/TiO2/SiO /Si substrate by microwave plasma chemical vapor deposition

2002 ◽  
Vol 11 (3-6) ◽  
pp. 499-503 ◽  
Author(s):  
Yasuhiko Hayashi ◽  
Yoshinori Matsushita ◽  
Tetsuo Soga ◽  
Masayoshi Umeno ◽  
Takashi Jimbo
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Self-Organized Microcones Grown on Si Substrate by Microwave Plasma Chemical Vapor Deposition

2008 ◽  
Vol 47 (4) ◽  
pp. 3050-3052
Author(s):  
Masataka Moriya ◽  
Yuji Matsumoto ◽  
Yoshinao Mizugaki ◽  
Tadayuki Kobayashi ◽  
Kouichi Usami
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Self Organized

DEPOSITION AND CHARACTERIZATION OF NANOCRYSTALLINE DIAMOND FILMS ON MIRROR-POLISHED Si SUBSTRATE BY BIASED ENHANCED MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 845-852
Author(s):  
T. Soga ◽  
T. Sharda ◽  
T. Jimbo ◽  
M. Umeno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Silicon Substrates ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Hard and smooth nanocrystalline diamond (NCD) thin films were deposited on polished silicon substrates by biased enhanced growth in microwave plasma chemical vapor deposition. The films deposited with varying the methane concentration and biasing voltage were characterized by Raman spectroscopy, nano-indenter, x-ray diffraction and atomic force microscopy. Stress in the films increases with decreasing methane concentration in the gas-phase and with increasing biasing. The adhesion between NCD film and Si substrate is very strong sustaining the compressive stress as high as high as 85 GPa. It was hypothesized that hydrogen content of the films and graphitic content of the films are responsible in generating stress. The hardness is well correlated with the Raman peak intensity ratio of NCD peak to G peak.

Formation of highly oriented diamond film on carburized (100) Si substrate

1995 ◽  
Vol 10 (1) ◽  
pp. 158-164 ◽  
Author(s):  
Hideaki Maeda ◽  
Miki Irie ◽  
Takafumi Hino ◽  
Katsuki Kusakabe ◽  
Shigeharu Morooka
Keyword(s):  
Diamond Film ◽  
Vapor Deposition ◽  
Flat Surface ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanometer Scale ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Oriented Film

Highly oriented diamond film was grown on a (100) Si substrate by a bias-enhanced microwave-plasma chemical vapor deposition. The Si surface was carburized at a faster rate by bias treatment than by carburization alone, but the initial carburization stage was indispensable. During the bias treatment, the flat surface was changed to a textured structure on the nanometer scale. The formation of this structure was required for the synthesis of a highly oriented diamond film. Diamond microcrystals formed subsequently were irregular and of a few to a few tens nanometers in size. They then grew to oriented film in the following growth process.

Direct observations of heteroepitaxial diamond on a silicon(110) substrate by microwave plasma chemical vapor deposition

1996 ◽  
Vol 11 (4) ◽  
pp. 1002-1010 ◽  
Author(s):  
C. J. Chen ◽  
L. Chang ◽  
T. S. Lin ◽  
F. R. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Defect Density ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Orientation Relationships ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Heteroepitaxial diamond has been successfully deposited on a Si(110) substrate by the microwave plasma chemical vapor deposition method. The pretreatment consisted of carburization and bias-enhanced nucleation steps. Cross-sectional transmission electron microscopy reveals that diamond can be in the cube-on-cube epitaxial relationship with the Si substrate. Various orientation relationships between diamond and Si substrates have also been observed, depending on the location where the plasma applied. Near the center of the plasma, twins were rarely observed in cube-on-cube epitaxial regions. Away from the center of the plasma ball, Σ3 twins are seen first, and then additional Σ9 and Σ27 twins occur near the edge of the plasma. In general, defect density in the epitaxial films is less than that observed in polycrystalline ones. No interlayer could be observed between diamond and silicon. In addition, 2H-type hexagonal diamond has also been found, and is in epitaxy with the Si substrate.

LATERAL OVERGROWTH OF DIAMOND FILMS ON METAL MASKED SUBSTRATE BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 841-844 ◽  
Author(s):  
H. YAMAMOTO ◽  
Y. NAOI ◽  
Y. FUJII ◽  
Y. SHINTANI
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Crystal Nucleation ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Mask Material

We have grown laterally overgrown diamond films on stripe patterned silicon substrates by microwave plasma chemical vapor deposition. Titanium was used as the mask material and stripe patterns were fabricated using conventional photolithographic method. The selective growth area and the metal mask part order to enhance the crystal nucleation was performed before photolithographic process. SEM observation revealed that the diamond film was laterally overgrown on titanium mask. The result width of diamond film was 16 μm. The grain size on mask region was about three times as large as that g rown on nucleation region.

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