Orientation influence of cubic boron nitride crystal facets on the epitaxial growth of diamond film by microwave plasma chemical vapor deposition

1994 ◽  
Vol 135 (3-4) ◽  
pp. 639-642 ◽  
Author(s):  
W.P. Chai ◽  
Y.S. Gu ◽  
M. Li ◽  
Z.H. Mai ◽  
Q.Z. Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Epitaxial Growth ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Routes to Diamond Heteroepiitaxy

1991 ◽  
Vol 250 ◽  
Author(s):  
Andrzej Badzian ◽  
Teresa Badzian
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical Vapor Deposition ◽  
Nickel Hydride ◽  
The Status

AbstractThis paper reviews the status of diamond heteroepitaxy approached by chemical vapor deposition and by physical methods. Reported are experiments with cubic boron nitride and nickel conducted with the help of microwave plasma chemical vapor deposition. X-ray diffraction data confirm diamond heteroepitaxy on the (111) faces of cubic boron nitride crystals. Heteroepitaxy on nickel was not demonstrated yet nevertheless suppression of graphite nucleation was achieved by formation of nickel hydride.

Epitaxial Growth of High Quality Diamond Film on the Cubic Boron Nitride Surface by Chemical Vapor Deposition

1996 ◽  
Vol 13 (10) ◽  
pp. 779-781 ◽  
Author(s):  
Chun-xiao Gao ◽  
Tie-chen Zhang ◽  
Guang-tian Zou ◽  
Zeng-sun Jin ◽  
Jie Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Epitaxial Growth ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
High Quality
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